Effect of Electrical Conductivity of Substrate on RF-Sputter-Deposition of μc-Si:H at -180℃
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概要
- 論文の詳細を見る
The μc-Si:H was fabricated by the reactive RF-sputtering technique onto low temperature substrate (-180℃). It has been found that the electrical conductivity of the substrate plays a significant role in the fabrication of μc-Si:H, i.e., the -SiH_3 rich μc-Si:H is produced on the insulating substrate but the -SiH_2- rich one on the conductive substrate. The substantial effect of the electrical conductivity of the substrate is assumed to be that the screening potential by the accumulated electric charge on the insulating substrate reduced the kinetic energy of ions which impinge onto the substrate.
- 社団法人応用物理学会の論文
- 1983-11-20
著者
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Hiraki Akio
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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MIYASATO Tatsuro
The Institute of Scientific and Industrial Research, Osaka University
-
HASHIMOTO Shin
Department of Electrical Engineering, Osaka University
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Miyasato Tatsuro
The Institute Of Scientific And Industrial Research Osaka University
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Hashimoto Shin
Department Of Electrical Engineering Osaka University
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