Hillock-Free Homoepitaxial Diamond (100) Films Grown at High Methane Concentrations
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2005-02-10
著者
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ITO Toshimichi
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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TERAJI Tokuyuki
Department of Electrical Engineering, Osaka University
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Ito Toshimichi
Department Of Electrical Electronic And Information Engineering Graduate School Of Engineering Osaka
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Teraji Tokuyuki
National Inst. For Materials Sci. Ibaraki Jpn
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Teraji Tokuyuki
Sensor Materials Center National Institute For Materials Science
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Teraji Tokuyuki
Department Of Electrical Engineering Graduate School Of Engineering Osaka University
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Ito Toshimichi
Osaka Univ. Osaka Jpn
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HAMADA Mitsuhiro
Department of Electrical Engineering, Graduate School of Engineering, Osaka University
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Hamada Mitsuhiro
Department Of Electrical Engineering Graduate School Of Engineering Osaka University
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- X-Ray Photoelectron and Electron Energy Loss Studies of Si-SiO_2 System: Angular Variation
- A Quantitative Analysis of Electron Enegy Loss Spectra of keV Electrons from Thin-Film-Substrate System
- Electronic Energy States of HfSe_2 and NbSe_2 by Low Energy Electron Loss Spectroscopy Study
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- Initial Stage of Bias-Enhanced Diamond Nucleation Induced by Microwave Plasma
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- Improvement in Visible Luminescence Properties of Anodized Porous Silicon by Indium Plating
- Elastic Recoil Detection Analysis for Hydrogen near the Surface of Chemical-Vapor-Deposited Diamond
- Initial Oxidation Process of Anodized Porous Silicon with Hydrogen Atoms Chemisorbed on the Inner Surface : Surfaces, Interfaces and Films
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- Light Emission from Microcrystalline Si Confined in SiO_2 Matrix through Partial Oxidation of Anodized Porous Silicon
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- Structural Change of Crystalline Porous Silicon with Chemisorption
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- Appearance of n-Type Semiconductingg Properties of cBN Single Crystals Grown at High Pressure : Semiconductors
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- CVD growth and field emission characteristics of various types of nano-structured carbon films
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- Multiple Scattering Correction to the Channeling Surface Peak for Thin Overlayers
- Metal/Silicon Reactions Studied by High Energy Jon Scattering
- Chemical Vapor Deposition of C Isotopically Enriched Polycrystalline Diamond (SELECTED TOPICS IN APPLIED PHYSICS : Diamond Semiconductors : from Materials to Devices)
- Boron-Doped Diamond Film Homoepitaxially Grown on High-Quality Chemical-Vapor-Deposited Diamond (100)
- Effective Use of Source Gas for Diamond Growth with Isotopic Enrichment
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- Synchronized B and ¹³C Diamond Delta Structures for an Ultimate In-Depth Chemical Characterization
- Hillock-Free Homoepitaxial Diamond (100) Films Grown at High Methane Concentrations
- Effective Use of Source Gas for Diamond Growth with Isotopic Enrichment
- Effective Use of Source Gas for Diamond Growth with Isotopic Enrichment