Hillock-Free Homoepitaxial Diamond (100) Films Grown at High Methane Concentrations
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概要
- 論文の詳細を見る
Improved growth processes for homoepitaxial diamond films with high quality and flat surfaces have been presented. Growth hillocks leading to rough surfaces were almost perfectly suppressed under the new growth processes, where the substrate temperature was set to a particular region. The high quality in electronic states was evidenced by the fact that the homoepitaxial films with thicknesses up to 11 μm gave intense free-exciton recombination emissions in room-temperature cathodoluminescence spectra. It is concluded that lobe-shape marks appearing on the surface after an apparent lateral diamond growth came from defects left on the substrate surface. The origin of the apparent lateral growth observed is discussed in relation to an enhanced speed of the step edge growth at the substrate temperature elevated to ${\sim}1000$°C.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2005-01-10
著者
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Ito Toshimichi
Department Of Electrical Electronic And Information Engineering Graduate School Of Engineering Osaka
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Teraji Tokuyuki
Department Of Electrical Engineering Graduate School Of Engineering Osaka University
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Hamada Mitsuhiro
Department Of Electrical Engineering Graduate School Of Engineering Osaka University
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Ito Toshimichi
Department of Electrical Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Teraji Tokuyuki
Department of Electrical Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Hamada Mitsuhiro
Department of Electrical Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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