Impact Excitation of Carriers in Diamond under Extremely High Electric Fields

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2001-07-15

著者

• ITO Toshimichi

  Department of Electrical Engineering, Faculty of Engineering, Osaka University

• TANIGUCHI Kenji

  Department of Cancer Research, Fuji Gotemba Research Laboratories, Chugai and Pharmaceutical Co

• Irie Makoto

  Nagaoka Univerity Of Technology Kamitomioka

• Kamakura Yoshinari

  Department Of Electronics And Information Systems Osaka University

• Kamakura Yoshinari

  Department Of Electronic Information And Energy Engineering Graduate School Of Eng. Osaka University

• Kamakura Yoshinari

  Department Of Electronic Information And Energy Engineering Osaka University

• WATANABE Tomokatsu

  Department of Electrical Engineering, Osaka University

• IRIE Masatake

  Department of Electrical Engineering, Osaka University

• TERAJI Tokuyuki

  Department of Electrical Engineering, Osaka University

• Ito Toshimichi

  Department Of Electrical Electronic And Information Engineering Graduate School Of Engineering Osaka

• Teraji Tokuyuki

  Department Of Electrical Engineering Graduate School Of Engineering Osaka University

• Irie Masatake

  Department Of Electrical Engineering Osaka University

• Taniguchi Kenji

  Department Of Biotechnology Tottori University

• KAMAKURA Yoshinari

  Department of Electronic, Information and Energy Engineering, Osaka University

• TANIGUCHI Kenji

  Department of Electronic, Information and Energy Engineering, Osaka University

• Kamakura Yoshinari

  Department of Electronic Engineering, Osaka University, Suita, Osaka 565-0871, Japan

関連論文

• Characterization of Surface Conductive Diamond Layer Grown by Microwave Plasma Chemical Vapor Deposition
• Electrical Properties of Boron-Implanted Homoepitaxial Diamond Films
• Effect of Hydrogen Plasma Treatment on Implantation Damage in Diamond Films Grown by Chemical Vapour Deposition
• Effective Cancer Targeting Using an Anti-tumor Tissue Vascular Endotheliumm specific Monoclonal Antibody (TES-23)
• Characterization of Homoepitaxial Diamond Films Grown from Carbon Monoxide
• Atomic configuration of boron pile-up at the Si/SiO2 interface
• Influences of Point and Extended Defects on As Diffusion in Si(Structure and Mechanical and Thermal Properties of Condensed Matter)
• Process Variation Compensation Technique for 0.5-V Body-Input Comparator
• Process Variation Compensation Technique for Voltage-controlled Ring Oscillator
• Analytical Expression Based Design of a Low-Voltage FD-SOI CMOS Low-Noise Amplifier(Analog Circuit Techniques and Related Topics)
• Ultralow-Power Current Reference Circuit with Low Temperature Dependence(Building Block, Analog Circuit and Device Technologies)
• Watch-Dog Circuit for Quality Guarantee with Subthreshold MOSFET Current(New System Paradigms for Integrated Electronics)
• Watchdog Circuit for Product Degradation Monitor using Subthreshold MOS Current
• A New Analog Correlator Circuit for DS-CDMA Wireless Applications
• Error Analysis on Simultaneous Data Transfers in CDMA Wired Interface
• C-12-26 An Auto-sensitivity Control Circuit for DS-CDMA Receiver Circuit
• Influence of N_2O Oxynitridation on Interface Trap Generation in Surface-Channel p-Channel Metal Oxide Semiconductor Field Effect Transistors
• Influence of N_2O-Oxynitridation on Interface Trap Generation in Surface-Channel PMOSFETs
• Temperature Dependence of Electron Mobility in InGaAs/InAlAs Heterostructures
• Novel Method of Intrinsic Characteristic Extraction in Lightly Doped Drain Metal Oxide Semiconductor Field Effect Transistors for Accurate Device Modeling
• Homoepitaxial Diamond Synthesis by DC Arc Plasma Jet Chemical Vapor Deposition
• Display Wall Empowered Visual Mining for CEOP Data Archive(Coordinated Enhanced Observing Period(CEOP))
• Initial CEOP-based Review of the Prediction Skill of Operational General Circulation Models and Land Surface Models(Coordinated Enhanced Observing Period(CEOP))
• Studies of Boron Segregation to {311} Defects in Silicon-Implanted Silicon
• Boron Segregation to {311} Defects Induced by Self-Implantation Damage in Si
• Boron Accumulation in the {311} Defect Region Induced by Self-Implantation into Silicon Substrate
• Impact Excitation of Carriers in Diamond under Extremely High Electric Fields
• Hole Trapping and Detrappirug Characteristics Investigated by Substrate Hot-Hole Injection into Oxide of Metal-Oxide-Semiconduetor Structure
• Hot-Hole-Induced Interface State Generation in p-Channel MOSFETs with Thin Gate Oxide
• Evaluation of Spatial Distribution of Hole Traps Using Depleted Gate MOSFETs
• Analytical Device Model of SOI MOSFETs Including Self-Heating Effect
• Spatial Distribution of Trapped Holes in the Oxide of Metal Oxide Semiconductor Field-Effect Transistors after Uniform Hot-Hole Injection
• Existence of Double-Charged Oxide Traps in Submicron MOSFET's (SOLID STATE DEVICES AND MATERIALS 1)
• Interface State Generation Mechanism in MOSFET's during Substrate Hot-Electron Injection : Special Section : Solid State Devices and Materials 2 : Silicon Devices and Process Technologies
• Hot Electron Drift Velocity in AlGaAs/GaAs Heterojunctions : Electrical Properties of Condensed Matter
• Monte Carlo Study of Hot Electron Transport in Quantum Wells : Electrical Properties of Condensed Matter
• Role of Boron Atoms on Fluorine Diffusion under Various Stages of Annealing
• Boron Emission Rate from Si/SiO_2 Interface Traps to Bulk Silicon for Dose Loss Modeling
• Dependence of Gate Leakage Current on Location of Soft Breakdown Spot in Metal-Oxide-Semiconductor Field-Effect Transistor
• Effect of Oxide Breakdown on Complementary Metal Oxide Semiconductor Circuit Operation and Reliability
• A Study of Pre-Breakdown in Ultra-Thin Silicon Dioxide Films Using Carrier Separation Measurement
• Trap Density Dependent Inelastic Tunneling in Stress-Induced Leakage Current
• Trap Density Dependent Inelastic Tunneling in Stress-Induced Leakage Current
• Ensemble Monte Carlo/Molecular Dynamics Simulation of Inversion Layer Mobility in Si MOSFETs : Effects of Substrate Impurity(the IEEE International Coference on SISPAD '02)
• Blue and Green Cathodoluminescence of Synthesized Diamond Films Formed by Plasma-Assisted Chemical Vapour Deposition : Optical Properties of Condensed Matter
• Characterization of Diamond Particles and Films Formed by Plasma-Assisted Chemical Vapour Deposition Using High-Voltage Electron Microscopy
• New Nondestructive Carrier Profiling for Ion Implanted Si Using Infrared Spectroscopic Ellipsometry
• Crossover of Direct and Indirect Transitions in (GaAs)_m/(AlAs)_5 Superlattices (m=1-11)
• Photoreflectance and Photoluminescence Study of (GaAs)_m/(AlAs)_5 (m=3-11)Superlattices: Direct and Indirect Transition
• Two-Dimensional Simulation of Quantum Tunneling across Barrier with Surface Roughness
• Effect of CO_2 Addition on Diamond Growth by DC Arc Plasma Jet Chemical Vapour Deposition
• Normal Atmospheric Preparation of YBa_2Cu_4O_8 Superconductor from Nitrate Solution by Freeze-Drying Method
• High-Quality YBa_2Cu_3O_ Ceramics Prepared from Freeze-Dried Nitrates
• Superconducting YBa_2Cu_O_Particles Prepared from Freeze-Dried Nitrates
• Growth and Characterization of Homogeneous YBa_2Cu_3O_ Powders Prepared by a Freeze-Drying Method
• X-Ray Photoelectron and Electron Energy Loss Studies of Si-SiO_2 System: Angular Variation
• A Quantitative Analysis of Electron Enegy Loss Spectra of keV Electrons from Thin-Film-Substrate System
• Electronic Energy States of HfSe_2 and NbSe_2 by Low Energy Electron Loss Spectroscopy Study
• ELS Study of Amorphous Si(Substrate)-SiO_2(Film Overlayer) System with Varying Primary Electron Energy
• Electronic Energy States of Tungsten Dichalcogenides by Low Energy Electron Loss Spectroscopy Study
• Initial Stage of Bias-Enhanced Diamond Nucleation Induced by Microwave Plasma
• Structural Study of Chemical-Vapor-Deposited Diamond Surface by High-Resolution Electron Microscopy
• Improvement in Visible Luminescence Properties of Anodized Porous Silicon by Indium Plating
• Elastic Recoil Detection Analysis for Hydrogen near the Surface of Chemical-Vapor-Deposited Diamond
• Initial Oxidation Process of Anodized Porous Silicon with Hydrogen Atoms Chemisorbed on the Inner Surface : Surfaces, Interfaces and Films
• Electron Affinity of Single-Crystalline Chemical-Vapor-Deposited Diamond Studied by Ultraviolet Synchrotron Radiation
• Observations of the Initial Stage of Chemical-Vapor-Deposited Diamond Growth Using Transmission Electron Microscopy
• Effect of Ambient on the Surface Resistance of Diamond Films during Cooling after Deposition
• Temperature Dependence of Electron Mobility in Si Inversion Layers
• A Low Power 622MHz CMOS Phase-Locked Loop with Source Coupled VCO and Dynamic PFD (Special Section of Papers Selected from ITC-CSCC'96)
• Initial Stages of GaAs Molecular Beam Epitaxy Growth on Porous Si
• Fabrication of Diamond Films at Low Pressure and Low-Temperature by Magneto-Active Microwave Plasma Chermical Vapor Deposition ( Plasma Processing)
• Identification of Functionally Important Amino Acid Residues in Zymomonas mobilis Levansucrase
• A Low-Voltage SOI-CMOS LC-Tank VCO with Double-Tuning Technique Using Lateral P-N Junction Variable Capacitance(Special lssue on Silicon RF Device & Integrated Circuit Technologies)
• Novel Method of Modulation Spectroscopy for Heterostructures: Electro-Photoreflectance
• Electroreflectance Study of Cd_xHg_Te
• Optical Constants of HgTe and HgSe
• Electroreflectance Measurements on Cd_xHg_Te
• A-3-1 A 5Msample/s 0.965-mW Switched-Capacitor Filter in 0.6-μm CMOS Technology
• High-Sensitivity SOI MOS Photodetector with Self-Amplification
• High Sensitivity Photodetector with Self-Amplification Capability
• A Low Power Analog Matched-Filter with Smart Sliding Correlation
• Light Emission from Microcrystalline Si Confined in SiO_2 Matrix through Partial Oxidation of Anodized Porous Silicon
• Nitrogen Doping Effects on Electrical Properties of Diamond Films
• Structural Change of Crystalline Porous Silicon with Chemisorption
• Stuffing of Noble Metals into Anodized Porous Silicon by Direct Evaporation
• Study of a Length Coefficient for an Extended Drift-Diffusion Model for Metal-Oxide-Semiconductor (MOS) Device Simulation
• Impact Ionization Model Using Average Energy and Average Square Energy of Distribution Function
• Novel Impact Ionization Model for Device Simulation Using Generalized Moment Conservation Equations
• Low Temperature Fabrication of Diamond Films with Nanocrystal Seeding
• Electric Field Breakdown of Lateral Schottky Diodes of Diamond
• Ohmic Contact Formation for N-Type Diamond by Selective Doping
• Chemical-Vapor-Deposited Diamond Overgrowth on Platinum Thin Films Deposited on Diamond Substrates
• High-Quality Homoepitaxial Diamond Films Grown at Normal Deposition Rates : Structure and Mechanical and Thermal Properties of Condensed Matter
• Luminescent Characteristics of Plasma-Oxidized Porous Silicon
• Visible Photoluminescence from Anodically Oxidized Porous Silicon
• Effect of Oxygen Component in Magneto-Active Microwave CH_4/He Plasma on Large-Area Diamond Nucleation over Si
• CVD growth and field emission characteristics of various types of nano-structured carbon films
• Highly Efficient Electron Emission Diode of Single-Crystalline Chemical-Vapor-Deposition Diamond
• Hillock-Free Homoepitaxial Diamond (100) Films Grown at High Methane Concentrations

もっと見る 閉じる

スポンサーリンク