Interface State Generation Mechanism in MOSFET's during Substrate Hot-Electron Injection : Special Section : Solid State Devices and Materials 2 : Silicon Devices and Process Technologies

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1988-12-20

著者

• 安田 直彦

  岐阜大工

• NAKAMURA Hiroshi

  Department of Analytical Chemistry, Faculty of Pharmaceutical Sciences, Science University of Tokyo

• Yasuda Naoki

  Department Of Electronic Engineering Faculty Of Engineering Osaka University

• TANIGUCHI Kenji

  Department of Cancer Research, Fuji Gotemba Research Laboratories, Chugai and Pharmaceutical Co

• Taniguchi K

  Department Of Electronic Engineering Faculty Of Engineering Osaka University

• Hamaguchi C

  Osaka Univ. Osaka Jpn

• Hamaguchi Chihiro

  Department Of Electronic Engineering Faculty Of Engineering Osaka University

• Hamaguchi Chihiro

  Deparimsnt Of Elecironics Facully Of Engineering Osaka University

• KAKUMU Masakazu

  Semiconductor Device Engineering Laboratory, Toshiba Corporation

• Kakumu Masakazu

  Semiconductor Device Engineering Laboratory Toshiba Corporation

• Taniguchi Kenji

  Department Of Biotechnology Tottori University

• Nakamura Hiroshi

  Department Of Analytical Chemistry Faculty Of Pharmaceutical Sciences Science University Of Tokyo

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