Yasuda Naoki | Department Of Electronic Engineering Faculty Of Engineering Osaka University
スポンサーリンク
概要
関連著者
-
Yasuda Naoki
Department Of Electronic Engineering Faculty Of Engineering Osaka University
-
安田 直彦
岐阜大工
-
Yasuda Naoki
Advanced Tech. R/d Center Mitsubishi Electric Co. Ltd.
-
Yasuda Naohiko
Department Of Electrical Engineering Faculty Of Engineering Gifu University
-
Itoh Yuuki
Electrical And Electronic Engineering Department Gifu University
-
大和 英弘
岐阜大工
-
Ishibashi Y
九州大
-
Ishibashi Y
Takeda Pharmaceutical Company Ltd.
-
Itoh Masakazu
Department Of Energy Engineering And Science Nagoya University
-
岩田 真
名大院工
-
Iwata M
Meiji Seika Kaisha Ltd. Yokohama Jpn
-
Ishibashi Yoshihiro
Business Communication Research Institute Aichi Shukutoku University
-
岩田 真
名工大院工
-
岩田 真
名工大
-
Ohwa Hidehiro
Electronic And Information Engineering Department Gifu University
-
石橋 善弘
愛知淑徳大
-
寺内 暉
関学大理工
-
寺内 暉
関西学院大
-
TANIGUCHI Kenji
Department of Cancer Research, Fuji Gotemba Research Laboratories, Chugai and Pharmaceutical Co
-
Taniguchi K
Department Of Electronic Engineering Faculty Of Engineering Osaka University
-
Hamaguchi C
Osaka Univ. Osaka Jpn
-
Hamaguchi Chihiro
Department Of Electronic Engineering Faculty Of Engineering Osaka University
-
Hamaguchi Chihiro
Deparimsnt Of Elecironics Facully Of Engineering Osaka University
-
Iwata Makoto
Department Of Applied Physics School Of Engineering Nagoya University
-
Taniguchi Kenji
Department Of Biotechnology Tottori University
-
前田 雅輝
名工大
-
寺内 暉
関西学院大・理
-
前田 雅輝
名工大・工
-
Ishibashi Yoshihiro
Faculty Of Business Aichi Shukutoku University
-
Ishibashi Yoshihiro
Synthetic Crystal Research Laboratory School Of Engineering Nagoya University
-
石橋 義弘
名大・工
-
Rahman Md.M.
岐阜大工
-
山下 洋八
東芝
-
鈴木 〓雄
名工大
-
安田 直彦
岐阜大学
-
大和田 謙二
原子力機構
-
大和田 謙二
原子力機構:crest
-
青柳 倫太郎
名工大
-
藤田 一彦
岐阜高専
-
石橋 善弘
九州大
-
Orihara Hiroshi
Nippon Soken Inc.
-
Quazi Deen
Department Of Electronic Engineering Faculty Of Engineering Osaka University
-
折原 宏
Hokkaido Univ. Sapporo
-
安田 直彦
岐阜大・工
-
廣田 和馬
阪大理
-
福田 竜生
原子力機構放射光
-
水木 純一郎
原子力機構放射光
-
筒井 智嗣
JASRI
-
Baron Alfred
JASRI
-
Baron A.
JASRI
-
Baron A.
理研播磨研:trip(jst):spring-8 Jasri
-
Baron A.
Jasri Spring-8:理研 Spring-8
-
Baron Alfred
理研
-
廣田 和馬
東大物性研
-
福田 竜夫
原子力機構放射光
-
NAKAMURA Hiroshi
Department of Analytical Chemistry, Faculty of Pharmaceutical Sciences, Science University of Tokyo
-
松下 三芳
Jfeミネラル:crest
-
水木 純一郎
原子力機構放射光:trip(jst)
-
水木 純一郎
原子力機構
-
Baron A
JAERI
-
広田 和馬
大阪大理
-
Baron A
Jasri Spring-8:理研 Spring-8
-
前田 雅輝
名工大工
-
岩田 真
名工大工
-
鈴木 里司
岐阜大工
-
松下 三芳
川鉄工業
-
折原 宏
名大・理工総研
-
福田 竜生
原子力機構放射光:理研播磨研:trip(jst)
-
IWATA Makoto
Department of Engineering Physics, Electronics and Mechanics, Graduate School of Engineering, Nagoya
-
森下 拓磨
名工大
-
鬘谷 浩平
名工大
-
鬘谷 浩平
名工大工
-
鈴木 〓雄
名工大工
-
水木 純一郎
日本原子力研究開発機構放射光科学研究ユニット
-
水木 純一郎
原子力機構・放射光科学研究ユニット
-
Yoshida Yoichi
The Institute Of Scientific And Industrial Research Osaka University
-
YASUDA Naohiko
Electrical and Electronic Engineering Department, Gifu University
-
ITOH Yuuki
Electrical and Electronic Engineering Department, Gifu University
-
OHWA Hidehiro
Electrical and Electronic Engineering Department, Gifu University
-
YAMASHITA Yohachi
Corporate R&D Center, Toshiba Corporation
-
Yamada Yasusada
Advanced Research Institute Waseda University:advanced Science Research Center Japan Atomic Energy R
-
Orihara Hiroshi
Applied Physics Department Graduate School Of Engineering Nagoya University
-
Yamashita Y
Power Supply Materials And Devices Laboratory Corporate R&d Center Toshiba Corporation
-
Yamashita Yohachi
Corporate R&d Center Toshiba Corporation
-
Yamashita Yohachi
Toshiba Materials & Devices Research Laboratories
-
Yamashita Yohachi
Corporate R&d Center Toshiba Corp.
-
Yamashita Yoshio
Sortec Corporation:(present Address) Oki Electric Industry Co. Ltd.
-
Yamashita Yasuharu
Synthetic Crystal Research Laboratory School Of Engineering Nagoya University
-
Yamashita Y
Graduate School Of Natural Science And Technology Okayama University
-
Baron Alfred
理研播磨研:trip(jst):spring-8 Jasri
-
Yamashita Y
Central Research Laboratory Hamamatsu Photonics K.k.
-
Nakamura Hiroshi
Department Of Analytical Chemistry Faculty Of Pharmaceutical Sciences Science University Of Tokyo
-
Yasuda Naohiko
Electric and Information Department, Gifu University, Gifu 501-1193, Japan
-
Ohwa Hidehiro
Electric and Information Department, Gifu University, Gifu 501-1193, Japan
-
Kubo Takashi
Department of Cardiovascular Medicine, Wakayama Medical University
-
OHWADA Kenji
Synchrotron Radiation Research Unit, Japan Atomic Energy Agency
-
広田 和馬
東北大理
-
大塚 昌太
岐阜大工
-
橋本 慎司
岐阜大工
-
Rahman Md.
岐阜大工
-
FUJIOKA Tomoaki
Department of Urology, Iwate Medical University
-
Fujioka Tomoaki
Department Of Urology Iwate Medical University School Of Medicine
-
趙 成華
名工大
-
ISHIBASHI Yoshihiro
Department of Applied Physics, School of Engineering, Nagoya University
-
黒田 敬太
名工大工
-
長谷川 祐介
名工大工
-
立崎 真輔
名工大工
-
Hlinka J.
チェコ物理研
-
Ohwada Kenji
Synchrotron Radiation Research Center (spring-8) Quantum Beam Science Directorate Japan Atomic Energ
-
高橋 菜津美
岐阜大工
-
UENO Shuichi
Department of Communication and Integrated Systems, Tokyo Institute of Technology
-
HIROTA Kazuma
Neutron Science Laboratory, Institute for Solid State Physics, University of Tokyo
-
Hlinka J.
チェコ物理学研究所
-
Ohwada Kenji
Synchrotron Radiation Research Unit Quantum Beam Science Directorate Japan Atomic Energy Agency:cres
-
水木 純一
原子力機構放射光
-
Toriumi Akira
Ulsi Research Laboratories Toshiba Corporation
-
Toriumi Akira
Ulsi Research Center Toshiba Corporation
-
水木 純一郎
日本原子力研究所関西研究所
-
廣田 和篤
東大物性研
-
Hirota K
Department Of Physics Tohoku University
-
Hirota Kazuma
Neutron Science Laboratory Institute For Solid State Physics The University Of Tokyo
-
Hamamoto K
Univ. Tokyo Tokyo Jpn
-
TERAUCHI Hikaru
Advanced Research Center of Science, School of Science and Technology, Kwansei Gakuin University
-
OHWA Hidehiro
Department of Electrical and Electronic Engineering, School of Engineering, Gifu University
-
YASUDA Naohiko
Department of Electrical and Electronic Engineering, School of Engineering, Gifu University
-
阪野 智一
岐阜大工
-
MATUSHITA Mituyoshi
Kawatetu Mining Co., Ltd.
-
ISHIBASHI Yoshihiro
Faculty of Business, Aichi Shukutoku University
-
SAKAGUCHI Masahiro
Electrical and Electronic Engineering Department, Gifu University
-
YAMAGUCHI Yasuo
LSI Research and Development Laboratory, Mitsubishi Electric Corporation
-
NISHIMURA Tadashi
LSI Research and Development Laboratory, Mitsubishi Electric Corporation
-
Yamaguchi Y
Inst. Fundamental Chemistry Kyoto Jpn
-
HASHIMOTO Kazuhiko
Semiconductor Device Engineering Laboratory, Toshiba Corporation
-
Terauchi Hikaru
Advanced Research Center Of Science School Of Science And Technology Kwansei Gakuin University
-
Terauchi Hikaru
Department Of Physics School Of Science Kwansei-gakuin University
-
Terauchi Hikaru
Advanced Research Center Of Science Faculty Of Science And Technology Kwansei Gakuin University (arc
-
QUAZI Deem
Department of Electronic Engineering, Faculty of Engineering, Osaka University
-
TOYOSHIMA Yoshiaki
Semiconductor Device Engineering Laboratory, Toshiba Corporation
-
MARUYAMA Akinori
Department of Electronic Engineering, Osaka University
-
KAKUMU Masakazu
Semiconductor Device Engineering Laboratory, Toshiba Corporation
-
TANIMOTO Hiroyoshi
Department of Electronics, Faculty of Engineering, Osaka University
-
Kakumu Masakazu
Semiconductor Device Engineering Laboratory Toshiba Corporation
-
MATSUZAKA Junichi
Department of Urology and Physiology II, Iwate Medical University, School of Medicine
-
AOKI Hikaru
Department of Urology and Physiology II, Iwate Medical University, School of Medicine
-
Fujioka Tomoaki
Department Of Urology School Of Medicine Iwate Medical University
-
Maruyama Akinori
Department Of Electronic Engineering Osaka University
-
Nishimura Tadashi
Lsi Research & Development Laboratory Mitsubishi Electric Corporation
-
Matsuzaka Junichi
Department Of Urology And Physiology Ii Iwate Medical University School Of Medicine
-
Toyoshima Yasutake
Electrotechnical Labotatory
-
Tanimoto Hiroyoshi
Department Of Electronics Faculty Of Engineering Osaka University
-
Toyoshima Yoshiaki
Semiconductor Device Engineering Laboratory Toshiba Corporation
-
Kubo Takashi
Department Of Anesthesia Akane Foundation Tsuchiya General Hospital : Present Address: Department Of
-
Kubo Takashi
Department Of Urology And Physiology Ii Iwate Medical University School Of Medicine
-
Yasuda Naoki
Department Of Urology And Physiology Ii Iwate Medical University School Of Medicine
-
Yamaguchi Yasuo
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
-
Aoki Hikaru
Department Of Urology And Physiology Ii Iwate Medical University School Of Medicine
-
Maruyama Akinori
Department Of Electrical Engineering Faculty Of Engineering Doshisha University
-
Fujioka Tomoaki
Department Of Urology And Physiology Ii Iwate Medical University School Of Medicine
-
Matushita Mituyoshi
Kawatetu Mining Co. Ltd.
-
Sakaguchi M
National Inst. Infectious Diseases Tokyo Jpn
-
Ishibashi Yoshihiro
Department Of Applied Physics Graduate School Of Engineering Nagoya University
-
Ueno Shuichi
Department Of Communication And Integrated Systems Tokyo Institute Of Technology
-
福田 竜生
JAEA/SPring-8
-
大和 英弘
岐阜大・工
-
Terauchi Hikaru
Advanced Research Center Of Science And School Of Science Kwansei-gakuin University
-
Hashimoto Kazuhiko
Semiconductor Device Engineering Laboratory Toshiba Corporation
-
Ueno Shuichi
Department Of Biological Science Faculty Of Science Yamaguchi University
-
Ueno Shuichi
Department Of Electronic Engineering Osaka University
-
OHWADA Kenji
Synchrotron Radiation Research Unit, Quantum Beam Science Directorate, Japan Atomic Energy Agency:CREST, Japan Science and Technology Agency (JST)
-
HIROTA Kazuma
Neutron Science Laboratory, Institute for Solid State Physics, The University of Tokyo
著作論文
- 20pHS-12 Ordered-Pb(In_Nb_)O_3のX線非弾性散乱実験(20pHS 誘電体(リラクサー),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))
- 19pxA-10 リラクサ-Pb(In_Nb_)O_3のフォノン観測(誘電体(リラクサー),領域10,誘導体,格子欠陥,X線・粒子線,フォノン物性)
- 20pHS-7 ブリジマン法で作製されたBi-O格子欠陥によるrandom fieldに基づくリラクサ固溶体Na_Bi_TiO_3-BaTiO_3単結晶の圧電特性(20pHS 誘電体(リラクサー),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))
- 27aYJ-12 リラクサ強誘電体固溶体NBTBTに於ける格子欠陥に基ずく誘電・圧電特性(誘電体(リラクサー),領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
- 30aRF-5 リラクサ強誘電体固溶体の圧電応答に於けるナノツインドメインの電界誘起分極反転(30aRF 誘電体(リラクサー),領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
- 23pYE-6 MPB近傍でのリラクサ強誘電体固溶体PMNTの圧電・誘電応答に及ぼす圧力誘起自由エネルギ変化の影響(誘電体(リラクサー関連),領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
- 19pXA-8 MPB近傍のリラクサ強誘電体固溶体の圧電応答への外力の効果(誘電体(リラクサー),領域10,誘導体,格子欠陥,X線・粒子線,フォノン物性)
- 24aTE-3 (1-x)Pb(In_Nb_)O_3-xPbTiO_3混晶の相転移(誘電体(リラクサー),領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
- 24aTE-7 リラクサ強誘電体固溶体の圧電特性に於ける品質係数Qからのドメインスイッチング(誘電体(リラクサー),領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
- 21aXA-2 Bi_4Ti_3O_の分極反転II(誘電体(ペロブスカイト),領域10,誘導体,格子欠陥,X線・粒子線,フォノン物性)
- 23pZD-5 Bi_4Ti_3O_の分極反転(23pZD 誘電体,領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
- 28aXK-3 AFMによるPZN-PT混晶のドメインウォール観察(誘電体)(領域10)
- 30pXJ-3 AFM によるリラクサー Pb(Zn_Nb_)O_3-PbTiO_3 混晶のドメイン観察
- 23pWY-11 リラクサ強誘電体固溶体NBTBTでのドメイン構造と誘電特性(23pWY マルチフェロイック・リラクサー,領域10(誘電体格子欠陥,X線・粒子線フォノン))
- Spatial Distribution of the B-site Inhomogeneity in an as-grown Pb(In_Nb_)O_3 Single Crystal Studied by a Complementary Use of X-ray and Neutron Scatterings(Condensed Matter : Structure, Mechanical and Thermal Properties)
- 28aXD-9 リラクサ強誘電体固溶体PZNT,PMNTの圧電特性への圧力効果(28aXD 誘電体,領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
- 28aXD-12 Pb(In_Nb_)O_3のX線・中性子散乱(28aXD 誘電体,領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
- Pressure Dependence of Piezoelectric Properties of Pb(Zn_Nb_)O_3-PbTiO_3 Binary System Single Crystal near a Morphotropic Phase Boundary
- Effect-of Electric Fields on Domain Structure and Dielectric Properties of Pb(ln_Nb_)0_3-PbTi0_3 near Morphotropic Phase Boundary
- Hole Trapping and Detrappirug Characteristics Investigated by Substrate Hot-Hole Injection into Oxide of Metal-Oxide-Semiconduetor Structure
- Hot-Hole-Induced Interface State Generation in p-Channel MOSFETs with Thin Gate Oxide
- Evaluation of Spatial Distribution of Hole Traps Using Depleted Gate MOSFETs
- Analytical Device Model of SOI MOSFETs Including Self-Heating Effect
- Spatial Distribution of Trapped Holes in the Oxide of Metal Oxide Semiconductor Field-Effect Transistors after Uniform Hot-Hole Injection
- Existence of Double-Charged Oxide Traps in Submicron MOSFET's (SOLID STATE DEVICES AND MATERIALS 1)
- Interface State Generation Mechanism in MOSFET's during Substrate Hot-Electron Injection : Special Section : Solid State Devices and Materials 2 : Silicon Devices and Process Technologies
- Monte Carlo Study of Hot Electron Transport in Quantum Wells : Electrical Properties of Condensed Matter
- Mechanisms of Veno-Occlusion within and outsid the Canine Corpus Cavernosum Penis Using a Pressure-Flow Technique and Cavernoso-Venography
- 20pYM-6 Bi_4Ti_3O_の相転移(誘電体,領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))