Toriumi Akira | Ulsi Research Laboratories Toshiba Corporation
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概要
関連著者
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Toriumi Akira
Ulsi Research Laboratories Toshiba Corporation
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Toriumi Akira
Ulsi Research Center Toshiba Corporation
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TAKAGI Shin-ichi
ULSI Research Laboratories, TOSHIBA Corporation
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Ohata Akiko
Ulsi Research Laboratories Toshiba Corporation
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Toriumi Akira
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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KOGA Junji
ULSI Research laboratories, Toshiba Corporation
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Takagi Shin-ichi
Ulsi Research Laboratories Toshiba Corporation
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Yasuda Naoki
Mirai-aset Aist
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Takagi S
Process & Manufacturing Center Semiconductor Company Toshiba Corporation
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Yasuda Naoki
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.
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SATAKE Hideki
ULSI Research Laboratories, TOSHIBA Corporation
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YASUDA Naoki
ULSI Research Laboratories, TOSHIBA Corporation
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SATAKE Hideki
MIRAI, Association of Super-Advanced Electronics Technologies (ASET)
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Koga Junji
Ulsi Research Laboratories Toshiba Corporation
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Toriumi Akira
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.
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Satake Hideki
Mirai Association Of Super-advanced Electronics Technologies (aset)
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Satake Hideki
Mirai-aset Aist
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Toriumi Akira
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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SATAKE Hideki
ULSI Research Center, TOSHIBA CORPORATION
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安田 直彦
岐阜大工
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NAKAMURA Hiroshi
Department of Analytical Chemistry, Faculty of Pharmaceutical Sciences, Science University of Tokyo
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Yasuda Naoki
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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TANIGUCHI Kenji
Department of Cancer Research, Fuji Gotemba Research Laboratories, Chugai and Pharmaceutical Co
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Taniguchi K
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Hamaguchi C
Osaka Univ. Osaka Jpn
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Hamaguchi Chihiro
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Hamaguchi Chihiro
Deparimsnt Of Elecironics Facully Of Engineering Osaka University
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KOGA Junji
Advanced LSI Technology Laboratory, Research and Development Center, Toshiba Corporation
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NIIYAMA Hiromi
ULSI Process Engineering Laboratory, Microelectronics Engineering Laboratory, TOSHIBA Corporation
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Koga J
Advanced Lsi Technology Laboratory Research And Development Center Toshiba Corporation
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Ohata A
Inst. Physics And Chemical Res. Saitama Jpn
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Niiyama Hiromi
Ulsi Process Engineering Lab. Microelectronics Engineering Lab. Toshiba Corp.
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Niiyama Hiromi
Ulsi Research Laboratories Toshiba Corporation
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NAKAJIMA Kazuaki
ULSI Research Laboratories, Toshiba Corporation
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Muraoka Kouichi
Ulsi Research Laboratories Toshiba Corporation
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UCHIDA Ken
ULSI Research Laboratories, Toshiba Corporation
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SHIBATA Toru
ULSI Research Laboratories, Toshiba Corporation
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Nakajima Kazuaki
Ulsi Research Laboratories Toshiba Corporation
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Taniguchi Kenji
Department Of Biotechnology Tottori University
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Uchida Ken
Ulsi Research Laboratories Toshiba Corporation
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Shibata Toru
Ulsi Research Laboratories Toshiba Corporation
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Nakamura Hiroshi
Department Of Analytical Chemistry Faculty Of Pharmaceutical Sciences Science University Of Tokyo
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TORIUMI Akira
ULSI Research Laboratories,Toshiba Corporation
著作論文
- Two Correlated Mechanisms in Thin SiO_2 Breakdown
- Reliability of Structurally Modified Ultra-Thin Gate Oxides
- Observation of Oxide-Thickness-Dependent Interface Roughness in Si MOS Structure
- Observation of Oxide Thickness Dependent Interface Roughness in Si MOS Structure
- Existence of Double-Charged Oxide Traps in Submicron MOSFET's (SOLID STATE DEVICES AND MATERIALS 1)
- Coulomb Blockade Effects in Edge Quantum Wire SOI MOSFETs
- Silicon-Based Single-Electron-Tunneling Transistor Operated at 4.2 K
- Evidence for Asymmetrical Hydrogen Profile in Thin D_2O Oxidized SiO_2 by SIMS and Modified TDS
- Three-Terminal Silicon Esaki Tunneling Device
- Coulomb Blockade Effects in Edge Quantum Wire SOl-MOSFETs (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
- Coulomb Blockade Effects in Edge Quantum Wire SOI MOSFETs