Observation of Oxide-Thickness-Dependent Interface Roughness in Si MOS Structure

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概要

• 論文の詳細を見る
• 1996-02-01

著者

• Toriumi Akira

  Ulsi Research Laboratories Toshiba Corporation

• Takagi S

  Process & Manufacturing Center Semiconductor Company Toshiba Corporation

• TAKAGI Shin-ichi

  ULSI Research Laboratories, TOSHIBA Corporation

• KOGA Junji

  ULSI Research laboratories, Toshiba Corporation

関連論文

• Two Correlated Mechanisms in Thin SiO_2 Breakdown
• Reliability of Structurally Modified Ultra-Thin Gate Oxides
• Influence of High Dielectric Constant in Gate Insulator on Remote Coulomb Scattering due to Gate Impurities in Si MOS Inversion Layer
• Physical Origins of Surface Carrier Density Dependences of Interface- and Remote-Coulomb Scattering Mobility in Si MOS Inversion Layer
• Unified Roughness Scattering Model Incorporating Scattering Component Induced by Thickness Fluctuation in SOI MOSFETs
• Quantitative Understanding of Mobility Degradation in High Effective Electric Field Region in MOSFETs with Ultra-thin Gate Oxides
• Quantitative Examination of Mobility Lowering Associated with Ultrathin Gate Oxides in Silicon Metal-Oxide-Semiconductor Inversion Layer
• Analytical Single-Electron Transistor(SET)Model for Design and Analysis of Realistic SET Circuits
• New Approach to Negative Differential Conductance with High Peak-to-Valley Ratio in Silicon
• Mobility Enhancement of SOI MOSFETs due to Subband Modulation in Ultrathin SOI Films
• Mobility Enhancement of SOI MOSFETs Due to Subband Modulation in Ultra-Thin SOI Films
• Observation of Oxide-Thickness-Dependent Interface Roughness in Si MOS Structure
• Observation of Oxide Thickness Dependent Interface Roughness in Si MOS Structure
• Existence of Double-Charged Oxide Traps in Submicron MOSFET's (SOLID STATE DEVICES AND MATERIALS 1)
• Improvement of Memory Characteristics of Metal-Ferroelectrics/Insulating Buffer Layer/Semiconductor Structures by Combination of Pulsed Laser Deposited SrBi_2Ta_2O_9 Films and Ultra-Thin SiN Buffer Layers
• Improvement of Memory Characteristics of MFIS Structures by Combination of Pulsed Laser Deposited SrBi_2Ta_2O_9 Films and Ultra-Thin SiN Buffer Layers
• Phenomenological Studies in Laser Cladding. Part II. : Thermometrical Experiments on the Melt Pool
• Phenomenological Studies in Laser Cladding. Part I. : Time-Resolved Measurements of the Absorptivity of Metal Powder
• Determinatuon of the Sense of Burgers Vector by Plane-Wave X-ray Topography
• Coulomb Blockade Effects in Edge Quantum Wire SOI MOSFETs
• Silicon-Based Single-Electron-Tunneling Transistor Operated at 4.2 K
• Evidence for Asymmetrical Hydrogen Profile in Thin D_2O Oxidized SiO_2 by SIMS and Modified TDS
• Three-Terminal Silicon Esaki Tunneling Device
• Significant Effect of OH inside Silicon Chemical Oxides on AHF(Anhydrous Hydrofluoric Acid) Etching
• Coulomb Blockade Effects in Edge Quantum Wire SOl-MOSFETs (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
• High Dielectric Constant of a Mixture of N-Alkyl Aliphatic Amides
• Coulomb Blockade Effects in Edge Quantum Wire SOI MOSFETs

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