Significant Effect of OH inside Silicon Chemical Oxides on AHF(Anhydrous Hydrofluoric Acid) Etching

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概要

• 論文の詳細を見る
• 1996-08-26

著者

• TAKAGI Shin-ichi

  ULSI Research Laboratories, TOSHIBA Corporation

• KUNISHIMA Iwao

  ULSI Research Laboratories, Toshiba Corporation

• Muraoka Kouichi

  Ulsi Research Laboratories Toshiba Corporation

• Hayasaka Nobuo

  Ulsi Research Center Toshiba Corp.

• Hayasaka Nobuo

  Ulsi Research Laboratories Toshiba Corporation

• Kunishima Iwao

  Ulsi Research Center Toshiba Corporation

• Takagi Shin-ichi

  Ulsi Research Laboratories Toshiba Corporation

関連論文

• Two Correlated Mechanisms in Thin SiO_2 Breakdown
• Observation of Oxide-Thickness-Dependent Interface Roughness in Si MOS Structure
• Observation of Oxide Thickness Dependent Interface Roughness in Si MOS Structure
• Anomalous Junction Leakage Behavior of Ti Self Aligned Silicide Contacts on Ultra-Shallow Junctions
• Anomalous Junction Leakage Behavior of Ti-SALICIDE Contacts on Ultra-Shallow Junctions
• Mechanism of Corrosion in Al-Si-Cu
• In Situ Transmission Electron Microseopy Observation of Single Crystallization of Filled Aluminum Interconnection
• Formation of Single-Crystal Al Interconnection by In Situ Annealing
• Evidence for Asymmetrical Hydrogen Profile in Thin D_2O Oxidized SiO_2 by SIMS and Modified TDS
• Water Absorption Properties of Fluorine-Doped SiO_2 Films Using Plasma-Enhanced Chemical Vapor Deposition
• Fluorine Doped SiO_2 for Low Dielectric Constant Films in Sub-Half Micron ULSI Multilevel Interconnection
• Significant Effect of OH inside Silicon Chemical Oxides on AHF(Anhydrous Hydrofluoric Acid) Etching
• Homogeneous Heteroepitaxial NiSi_2 Formation on (100)Si
• Observation of Oxide-Thickness-Dependent Interface Roughness in Si MOS Structure

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