Homogeneous Heteroepitaxial NiSi_2 Formation on (100)Si
スポンサーリンク
概要
- 論文の詳細を見る
The mechanism of NiSi_2/Si interface formation on (100)Si is examined, The interface roughness between NiSi_2 and Si strongly depends on the substrate impurity species. A smooth interface is formed on As-doped Si, but the interface is highly faceted on the {111} plane on BF_2-doped Si. The covalent radius of the impurity atoms strongly affects the interface formation. An interfacial distorted layer is observed only at the NiSi_2/As-doped Si interface. This distorted layer could reduce the lattice strain between NiSi_2 and Si. These results demonstrate the possibility of realizing a homogeneous epitaxial interface.
- 社団法人応用物理学会の論文
- 1990-12-20
著者
-
AOYAMA Tomonori
ULSI Process Engineering Laboratory, Microelectronics Engineering Laboratory, Toshiba Corporation
-
Suguro Kyoichi
Ulsi Research Center Toshiba Corporation
-
Kunishima Iwao
Ulsi Research Center Toshiba Corporation
-
MATSUNAGA Junichi
ULSI Research Center, Toshiba Corporation
-
Matsunaga Junichi
Ulsi Research Center Toshiba Corporation
-
Aoyama Tomonori
Ulsi Research Center Toshiba Corporation
-
Aoyama Tomonori
Ulsi Process Engineering Laboratory Microelectronics Engineering Laboratory Semiconductor Company To
関連論文
- Ru Electrode Deposited by Sputtering in Ar/O_2 Mixture Ambient
- Interfacial Layers between Si and Ru Films Deposited by Sputtering in Ar/O_2 Mixture Ambient
- Anomalous Junction Leakage Behavior of Ti Self Aligned Silicide Contacts on Ultra-Shallow Junctions
- Anomalous Junction Leakage Behavior of Ti-SALICIDE Contacts on Ultra-Shallow Junctions
- Formation of Single-Crystal Al Interconnection by In Situ Annealing
- Inlaid Cu Interconnects Employing Ti-Si-N Barrier Metal for ULSI Applications
- Ruthenium Films Prepared by Liquid Source Chemical Vapor Deposition Using Bis-(ethylcyclopentadienyl)ruthenium
- Significant Effect of OH inside Silicon Chemical Oxides on AHF(Anhydrous Hydrofluoric Acid) Etching
- Chemical Vapor Deposition of Ru and Its Application in (Ba,Sr) TiO_3 Capacitors for Future Dynamic Random Access Memories
- Homogeneous Heteroepitaxial NiSi_2 Formation on (100)Si
- Double-Level Cu Inlaid Interconnects with Simultaneously Filled Via Plugs