Mechanism of Corrosion in Al-Si-Cu

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1991-07-15

著者

• Koga Y

  Department Of Physics Kurume University

• Okano Haruo

  Ulsi Research Center Toshiba Corp.

• Koga Y

  Aist Ibaraki Jpn

• HAYASAKA Nobuo

  ULSI Research Center, Toshiba Corp.

• KOGA Yuri

  MOS Process Engineering Sec., Integrated Circuit Advanced Process Engineering, Department, Toshiba C

• SHIMOMURA Koji

  ULSI Research Center, Toshiba Corp.

• YOSHIDA Yukimasa

  MOS Process Engineering Sec., Integrated Circuit Advanced Process Engineering, Department, Toshiba C

• Hayasaka Nobuo

  Ulsi Research Center Toshiba Corp.

• Shimomura Koji

  Ulsi Research Center Toshiba Corp.

• Yoshida Yukimasa

  Mos Process Engineering Sec. Integrated Circuit Advanced Process Engineering Department Toshiba Corp

関連論文

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• The Fraction of Sp^3 Bonding in Carbon Thin Film Prepared Using Pulsed Laser Deposition
• Formation of Cubic Phase Carbon Nitride Solid by Low Energy Nitrogen Implantation into Graphite
• Sidewall Modification of Single-walled Carbon Nanotubes with Sulfur-containing Functionalities and Gold Nanoparticle Attachment
• Effect of Laser Wavelength for Surface Morphology of Aluminum Nitride Thin Films by Nitrogen Radical-Assisted Pulsed Laser Deposition
• Influence of DC Biasing on the Formation of Hydrogenated Amorphous Carbon Films Using a Plasma-Based Ion Implantation Technique
• Carrier Transport Mechanisms of InSe p-n Homojunction : Semiconductors and Semiconductor Devices
• Annealing Behavior of Zn-Doped p-Type InSe
• Photoconductivity and Photo-Hall Effect of p-Type InSe Single Crystals
• Optical Absorption Edge in γ-InSe(Excitons and Phonons)
• Mechanism of Corrosion in Al-Si-Cu
• Development of an Optically Pumped Cs Frequency Standard at the NRLM
• The Optically Pumped Cs Frequency Standard at the NRLM
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• Measurement and Analysis of the Atomic Velocity Distribution and the Second-Order Doppler Shift of the Cesium Beam Frequency Standard, NRLM-II
• In Situ Transmission Electron Microseopy Observation of Single Crystallization of Filled Aluminum Interconnection
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• Mechanism for Initial Stage of Selective Tungsten Growth Employing a WF_6 and SiH_4 Mixture
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• Water Absorption Properties of Fluorine-Doped SiO_2 Films Using Plasma-Enhanced Chemical Vapor Deposition
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• A New High-Density Plasma Etching System Using A Dipole-Ring Magnet
• Gate Oxide Breakdown Phenomena in Magnetron Plasma
• Significant Effect of OH inside Silicon Chemical Oxides on AHF(Anhydrous Hydrofluoric Acid) Etching
• SiO_2 Tapered Etching Employing Magnetron Discharge of Fluorocarbon Gas

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