Carrier Transport Mechanisms of InSe p-n Homojunction : Semiconductors and Semiconductor Devices

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1988-07-20

著者

• KOGA YUTAKA

  Department of Surgery and Oncology, Graduate School of Medical Sciences, Kyushu University

• Koga Y

  Department Of Physics Kurume University

• Ikari T

  Miyazaki Univ. Miyazaki Jpn

• Ikari Tetsuo

  Department Of Electronic Engineering Miyazaki University

• Ikari Tetsuo

  Department Of Electrical And Electronic Engineering Miyazaki University

• Ikari Tetsuo

  Department Of Electrical And Electronic Engineering University Of Miyazaki

• Ikari Tetsuo

  Faculty Of Engineering University Of Miyazaki

• SHIGETOMI Shigeru

  Department of Physics, Kurume University

• SHIGETOMI Shigenobu

  Department of Physics, Kurume University

• Koga Y

  Aist Ibaraki Jpn

• Koga Yutaka

  Department Of Anatomic Pathology Graduate School Of Medical Sciences Kyushu University

• Shigetomi S

  Kurume Univ. Fukuoka Jpn

• Shigetomi Shigeru

  Department Of Physics Kurume University

関連論文

• Complete Extirpation of a Bronchogenic Cyst Causing Recurrent Laryngeal Nerve Palsy by Thoracoscopy : Report of a Case
• Photochemical Modification of Diamond Films with Sulfur-Containing Functionalities
• Synthesis and Surface Acoustic Wave Property of Aluminum Nitride Thin Films Fabricated on Silicon and Diamond Substrates Using the Sputtering Method : Surfaces, Interfaces, and Films
• Binding Energies of Amorphous CN and SiCN Films on X-Ray Photoelectron Spectroscopy : Surfaces, Interfaces, and Films
• The Fraction of Sp^3 Bonding in Carbon Thin Film Prepared Using Pulsed Laser Deposition
• Formation of Cubic Phase Carbon Nitride Solid by Low Energy Nitrogen Implantation into Graphite
• Electrical Properties of Layered ZrSe_2 Single Crystals Annealed in Selenium Atmosphere
• Effect of Isothermal Annealing on Crystallization Mechanism of Amorphous Ni_Cr_P_ Metallic Alloys
• Photoacoustic Signals from Ion-Implanted and Epitaxially Grown Layers on Silicon Substrate
• Spatial Distribution of EL2 in GaAs Wafer Determined by Photoacoustic Spectroscopy
• Sidewall Modification of Single-walled Carbon Nanotubes with Sulfur-containing Functionalities and Gold Nanoparticle Attachment
• Effect of Laser Wavelength for Surface Morphology of Aluminum Nitride Thin Films by Nitrogen Radical-Assisted Pulsed Laser Deposition
• Effect of Surface States on Piezoelectric Photothermal Specta of Silicon Single Crystals
• Autoimmune pancreatitis starting as a localized form
• Influence of DC Biasing on the Formation of Hydrogenated Amorphous Carbon Films Using a Plasma-Based Ion Implantation Technique
• Metachronous Mature Cystic Teratomas in the Left Ovary and Bilateral Diaphragm : Report of a Case
• Carrier Transport Mechanisms of InSe p-n Homojunction : Semiconductors and Semiconductor Devices
• Annealing Behavior of Zn-Doped p-Type InSe
• Photoconductivity and Photo-Hall Effect of p-Type InSe Single Crystals
• Optical Absorption Edge in γ-InSe(Excitons and Phonons)
• Fundamenral Absorption Edge of γ-InSe
• Investigation of Ni Induced Deep Levels in N-Type Si by a Temperature Dependence of Piezoelectric Photothermal Signals
• Investigation of EL6 Deep Level in Semi-Insulating GaAs by Means of a Temperature Dependence of Piezoelectric Photothermal Signal
• Optical and Electrical Properties of Layer Semiconductor n-InSe Doped with Sn
• Optical and Electrical Properties of p-GaAe Doped with Sb
• Annealing Behavior of Layer Semiconductor p-InSe Doped with Hg
• Piezoelectric Photothermal Study of the Optical Absorption Spectra of Microcrystalline Silicon
• Distribution of Substitutional Nickel Atoms in Dislocated Silicon Crystal
• Distribution of Substitutional Nickel Atoms in Dislocation-Free Silicon Studied by Deep Level Transient Spectroscopy and Theoretical Analyses Based on the Dissociative Mechanism of Diffusion
• In-Diffusion and Annealing Processes of Substitutional Nickel Atoms in Dislocation-Free Silicon
• Near Band Edge Non-radiative Recombination of Si Single Crystal Investigated by Piezoelectric Photothermal Spectroscopy
• Reduced Static Dielectric Constant Estimated from Exciton Binding Energy in Dilute Nitride Semiconductors
• Photoacoustic Spectra for Porous Silicon Using Piezoelectric Transducer and Microphone
• Mechanism of Corrosion in Al-Si-Cu
• Development of an Optically Pumped Cs Frequency Standard at the NRLM
• The Optically Pumped Cs Frequency Standard at the NRLM
• Spectral Width of Saturated Absorption Spectra of Cs with a Laser Diode
• Measurement and Analysis of the Atomic Velocity Distribution and the Second-Order Doppler Shift of the Cesium Beam Frequency Standard, NRLM-II
• Electrical Properties of p- and n-GaSe Doped with As and Ge
• Radiative Centers in Layer Semiconductor p-GaSe Doped with Mn
• Annealing Behavior of Deep Trap Level in p-GaTe
• Photoluminescence Spectra of n-GaSe Layered Semiconductor Doped with Sn
• Investigation of the Electron Nonradiative Transition in Extremely Thin GaInNAs/GaAs Single Quantum Well by Using a Piezoelectric Photothermal Spectroscopy
• Non-Radiative Carrier Recombination Process in AlGaAs/GaAs Hetero-Structure investigated by Piezoelectric Photothermal Spectroscopy
• Photoacoustic Spectra of Si Wafers at Liquid Helium Temperature
• Effect of Thermal Donor Formation on the Photoacoustic Spectra of p-Si Single Crystals
• Near Band Edge Photoacoustic Spectra of p-Si Single Crystals
• Determination of exciton binding energy of GaInNAs quantum well structures by piezoelectric photothermal spectroscopy compared with photoreflectance measurements (Special issue: Microprocesses and nanotechnology)
• Piezoelectric Photoacoustic and Photoluminescence Properties of CuIn_XGa_Se_2 Alloys
• Impurity Levels in Layered Semiconductor GaS Doped with Cu
• Nonradiative Investigation of Hole Photoionization Spectrum of EL2 in Carbon Concentration Controlled Semi-Insulating GaAs
• Piezoelectric Photothermal Spectra of Co Doped ZnO Semiconductor
• Crystallization of Amorphous GeSe_2 Semiconductor by Isothermal Annealing without Light Radiation
• Temperature Dependence of Electrical Properties in Si-Implanted Semi-Insulating GaAs
• Temperature Dependence of Photoluminescence in Layered Semiconductor n-GaS Doped with Sn
• Effect of Annealing on Electrical and Optical Properties of Si-Implanted GaAs
• Crystalline InSe Films Prepared by RF-Sputtering Technique
• Photoluminescence Studies of Layered Semiconductor GaS Doped with Ge
• Distribution of Substitutional Nickel Atoms in Dislocated Silicon Crystal
• Photoacoustic Spectra for Porous Silicon Using Piezoelectric Transducer and Microphone
• Piezoelectric Photothermal Study of the Optical Absorption Spectra of Microcrystalline Silicon
• Near Band Edge Non-radiative Recombination of Si Single Crystal Investigated by Piezoelectric Photothermal Spectroscopy
• Growth and Annealing of ZnO Films Grown by Spray Pyrolysis
• Annealing Behavior of Deep Trap Level in p-GaTe
• Optical and Electrical Characteristics of Layered Semiconductor p-InSe Doped with Sb
• Investigation of the Electron Nonradiative Transition in Extremely Thin GaInNAs/GaAs Single Quantum Well by Using a Piezoelectric Photothermal Spectroscopy
• Effect of Surface States on Piezoelectric Photothermal Specta of Silicon Single Crystals

もっと見る 閉じる

スポンサーリンク