Effect of Annealing on Electrical and Optical Properties of Si-Implanted GaAs
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概要
- 論文の詳細を見る
The annealing behavior (up to 500℃) of semi-insulating GaAs implanted with 2×10^<14> Si ions/cm^2 at 200 keV has been investigated by measuring the sheet resistivity, Hall effect and optical absorption. In the samples annealed at temperatures below 450℃, the sheet resistivity, Hall mobility and optical absorption show the characteristics of amorphous semiconductors. The sample annealed at 500℃ recovers to a partially-compensated n-type semiconductor, and the Hall mobility can be explained as scattering due to residual defects.
- 社団法人応用物理学会の論文
- 1983-08-20
著者
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Shigetomi Shigeru
Department Of Physics Kurume University
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MATUMORI Tokue
Department of Electronics, Faculty of Engineering, Tokai University
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Matumori Tokue
Department Of Electronics Faculty Of Engineering Tokai University
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