Effect of Thermal Donor Formation on the Photoacoustic Spectra of p-Si Single Crystals
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-05-30
著者
-
Ikari T
Miyazaki Univ. Miyazaki Jpn
-
Ikari Tetsuo
Department Of Electronic Engineering Miyazaki University
-
Ikari Tetsuo
Department Of Electrical And Electronic Engineering Miyazaki University
-
Ikari Tetsuo
Department Of Electrical And Electronic Engineering University Of Miyazaki
-
Ikari Tetsuo
Faculty Of Engineering University Of Miyazaki
-
Futagami K
Kyushu Sangyo Univ. Fukuoka Jpn
-
Futagami Koji
Department of Electronics, Miyazaki University
-
Futagami Koji
Department Of Applied Physics Faculty Of Engineering Kyushu University
-
Yokoyama H
Electrotechnical Lab. Ibaraki Jpn
-
Yokoyama Hirosumi
Department of Electrical and Electronic Engineering, Miyazaki University
-
HIGASHI Kouji
Department of Electronics, Miyazaki University
-
Higashi Kouji
Department Of Electronics Miyazaki University
-
Yokoyama Hirosumi
Department Of Electrical And Electronic Engineering Miyazaki University
関連論文
- Electrical Properties of Layered ZrSe_2 Single Crystals Annealed in Selenium Atmosphere
- Effect of Isothermal Annealing on Crystallization Mechanism of Amorphous Ni_Cr_P_ Metallic Alloys
- Photoacoustic Signals from Ion-Implanted and Epitaxially Grown Layers on Silicon Substrate
- Spatial Distribution of EL2 in GaAs Wafer Determined by Photoacoustic Spectroscopy
- Effect of Surface States on Piezoelectric Photothermal Specta of Silicon Single Crystals
- Carrier Transport Mechanisms of InSe p-n Homojunction : Semiconductors and Semiconductor Devices
- Annealing Behavior of Zn-Doped p-Type InSe
- Photoconductivity and Photo-Hall Effect of p-Type InSe Single Crystals
- Optical Absorption Edge in γ-InSe(Excitons and Phonons)
- Fundamenral Absorption Edge of γ-InSe
- Investigation of Ni Induced Deep Levels in N-Type Si by a Temperature Dependence of Piezoelectric Photothermal Signals
- Investigation of EL6 Deep Level in Semi-Insulating GaAs by Means of a Temperature Dependence of Piezoelectric Photothermal Signal
- Optical and Electrical Properties of Layer Semiconductor n-InSe Doped with Sn
- Optical and Electrical Properties of p-GaAe Doped with Sb
- Annealing Behavior of Layer Semiconductor p-InSe Doped with Hg
- Piezoelectric Photothermal Study of the Optical Absorption Spectra of Microcrystalline Silicon
- Distribution of Substitutional Nickel Atoms in Dislocated Silicon Crystal
- Distribution of Substitutional Nickel Atoms in Dislocation-Free Silicon Studied by Deep Level Transient Spectroscopy and Theoretical Analyses Based on the Dissociative Mechanism of Diffusion
- In-Diffusion and Annealing Processes of Substitutional Nickel Atoms in Dislocation-Free Silicon
- Near Band Edge Non-radiative Recombination of Si Single Crystal Investigated by Piezoelectric Photothermal Spectroscopy
- Reduced Static Dielectric Constant Estimated from Exciton Binding Energy in Dilute Nitride Semiconductors
- Reflectance spectra of BN Materials in the Vacuum Ultraviolet
- Photoacoustic Spectra for Porous Silicon Using Piezoelectric Transducer and Microphone
- Growth Processes of GaAs Grown by Atomic Layer Epitaxy Revealed by Atomic Force Microscopy
- Scanning Tunneling Microscopy of (NH_4)_2S_x-Treated GaAs Surfaces Annealed in Vacuum
- Electrical Properties of p- and n-GaSe Doped with As and Ge
- Radiative Centers in Layer Semiconductor p-GaSe Doped with Mn
- Annealing Behavior of Deep Trap Level in p-GaTe
- Photoluminescence Spectra of n-GaSe Layered Semiconductor Doped with Sn
- Investigation of the Electron Nonradiative Transition in Extremely Thin GaInNAs/GaAs Single Quantum Well by Using a Piezoelectric Photothermal Spectroscopy
- Non-Radiative Carrier Recombination Process in AlGaAs/GaAs Hetero-Structure investigated by Piezoelectric Photothermal Spectroscopy
- Photoacoustic Spectra of Si Wafers at Liquid Helium Temperature
- Effect of Thermal Donor Formation on the Photoacoustic Spectra of p-Si Single Crystals
- Near Band Edge Photoacoustic Spectra of p-Si Single Crystals
- Determination of exciton binding energy of GaInNAs quantum well structures by piezoelectric photothermal spectroscopy compared with photoreflectance measurements (Special issue: Microprocesses and nanotechnology)
- Clinical Application of Ultrasonographic Diagnosis of Gastrointestinal Disease
- Optical and Mechanical Properties of Hard Hydrogenated Amorphous Carbon Films Deposited by Plasma CVD
- Formation of Cubic Boron Nitride Film on Si with Boron Buffer Layers
- Piezoelectric Photoacoustic and Photoluminescence Properties of CuIn_XGa_Se_2 Alloys
- Function of Substrate Bias Potential for Formation of Cubic Boron Nitride Films in Plasma CVD Technique
- Impurity Levels in Layered Semiconductor GaS Doped with Cu
- Measurements of Minute Lattice Distortions in Silicon Crystals by X-Ray Double-Crystal Topography Using Extremely Asymmetric Reflection
- Impairment of Angiogenic Activity in the Serum From Patients With Coronary Aneurysms Due to Kawasaki Disease
- Nonradiative Investigation of Hole Photoionization Spectrum of EL2 in Carbon Concentration Controlled Semi-Insulating GaAs
- Measurements of Lattice Parameters and Half-Widths of the Rocking Curve on GaAs Crystal by the X-Ray Double-Crystal Method Using a Cu K_α Doublet
- Piezoelectric Photothermal Spectra of Co Doped ZnO Semiconductor
- Increased Production of Vascular Endothelial Growth Factor-D and Lymphangiogenesis in Acute Kawasaki Disease
- OE-282 Impairment of in vitro angiogenesis in patients after Kawasaki disease(Congenital Heart Disease/Kawasaki's Disease 1 (M) : OE35)(Oral Presentation (English))
- Crystallization of Amorphous GeSe_2 Semiconductor by Isothermal Annealing without Light Radiation
- Diffraction Topography of the X-ray Diffraction Spikes of Diamond
- X-Ray Double-Crystal Method for Crystal Lattice Parameter Measurements Using Cu K_α Doublet
- Highly Uniform Regrown In_Ga_As/AlAs/InAs Resonant Tunneling Diodes on In_Ga_As
- Uniformity of the High Electron Mobility Transistors and Resonant Tunneling Diodes Integrated on an InP Substrate Using an Epitaxial Structure Grown by Molecular Beam Epitaxy and Metalorganic Chemical Vapor Deposition
- Temperature Dependence of Photoluminescence in Layered Semiconductor n-GaS Doped with Sn
- Photoluminescence Studies of Layered Semiconductor GaS Doped with Ge
- Distribution of Substitutional Nickel Atoms in Dislocated Silicon Crystal
- Photoacoustic Spectra for Porous Silicon Using Piezoelectric Transducer and Microphone
- Piezoelectric Photothermal Study of the Optical Absorption Spectra of Microcrystalline Silicon
- Observations of Lattice Distortions near Silicon Surfaces Implanted with Low-Energy Nitrogen Ions by Reflection X-ray Topography
- Measurements of Minute Lattice Distortions in Silicon Crystals by X-Ray Double-Crystal Topography Using Extremely Asymmetric Reflection
- Near Band Edge Non-radiative Recombination of Si Single Crystal Investigated by Piezoelectric Photothermal Spectroscopy
- Growth and Annealing of ZnO Films Grown by Spray Pyrolysis
- Annealing Behavior of Deep Trap Level in p-GaTe
- Optical and Electrical Characteristics of Layered Semiconductor p-InSe Doped with Sb
- Investigation of the Electron Nonradiative Transition in Extremely Thin GaInNAs/GaAs Single Quantum Well by Using a Piezoelectric Photothermal Spectroscopy
- Effect of Surface States on Piezoelectric Photothermal Specta of Silicon Single Crystals