Highly Uniform Regrown In_<0.53>Ga_<0.47>As/AlAs/InAs Resonant Tunneling Diodes on In_<0.53>Ga_<0.47>As

概要

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The molecular beam epitaxial (MBE) regrowth of pseudomorphic In_<0.53>Ga_<0.47>As/AlAs/InAs resonant tunneling diodes (RTDs) onto an InGaAs layer lattice-matched to InP substrate is successfully achieved by elaborating native-oxide-removal conditions prior to MBE overgrowth. The quality of native-oxide removed surface, as assessed by atomic force microscopy (AFM) and secondary ion mass spectroscopy (SIMS), and the quality of regrown surface, as assessed by AFM, shows that the window for the optimum native-oxide-removal temperature is very narrow : 535 ± 10℃. The peak current standard deviation of the RTDs regrown on the top layer of high electron mobility transistors (HEMTs) grown by metalorganic chemical vapor deposition (MOCVD) is as low as 3% over a 2° wafer, which is almost same as that of RTDs/HEMTs directly grown by MBE.
社団法人応用物理学会の論文
1999-02-28