InP-based High-speed Transistors and Their IC Applications

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概要

• 論文の詳細を見る
• 2006-09-13

著者

• SANO Kimikazu

  NTT Photonics Laboratories

• Murata K

  Ntt Photonics Laboratories

• Fukuyama Hiroyuki

  Ntt Photonics Laboratories Ntt Corporation

• Fukuyama Hiroyuki

  Ntt Photonics Laboratories

• NAKAMURA Makoto

  NTT Photonics Laboratories, NTT Corporation

• KURISHIMA Kenji

  NTT Photonics Laboratories, NTT Corporation

• TOKUMITSU Masami

  NTT Photonics Laboratories, NTT Corporation

• KOSUGI Toshihiko

  NTT Photonics Laboratories, NTT Corporation

• ENOKI Takatomo

  NTT Photonics Laboratories, NTT Corporation

• MURATA Koichi

  NTT Photonics Laboratories, NTT Corporation

• Murata Koichi

  Ntt Photonics Laboratories Ntt Corporation

• Murata K

  Ntt Corp. Atsugi‐shi Jpn

• Sano K

  Ntt Photonics Laboratories Ntt Corporation

• Enoki Takatomo

  Ntt Photonics Laboratories

• Murata K

  Ntt Photonics Laboratories Ntt Corporation

• Kosugi Toshihiko

  Ntt Photonics Laboratories

• Nakamura Makoto

  Ntt Photonics Laboratories Ntt Corporation

• Kurishima Kenji

  Ntt Photonics Laboratories Ntt Corporation

• Maezawa Koichi

  Ntt System Electronics Laboratories:(present Address) Faculty Of Engineering Nagoya University

• Tokumitsu Masami

  Ntt Photonics Laboratories

• Murata Koichi

  Ntt Photonics Laboratories

関連論文

• Metamorphic Resonant Tunneling Diodes and Its Application to Chaos Generator ICs
• Dielectric and Ferroelectric Properties of Heteroepitaxial Ba_xSr_TiO_3 Films Grown on SrRuO_3/SrTiO_3 Substrates(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
• Epitaxial Growth of Ti_Al_xN Buffer Layer for a Ferroelectric (Ba, Sr) TiO_3 Capacitor on Si Substrate
• Asymmetric Ferroelectricity and Anomalous Current Conduction in Heteroepitaxial BaTiO_3 Thin Films
• Ferroelectric Properties in Heteroepitaxial Ba_Sr_TiO_3 Thin Films on SrRuO_3/SrTiO_3 Substrates
• Exclusive OR/NOR IC for 40-Gbit/s Clock Recovery Circuit (Special Issue on Ultra-High-Speed IC and LSI Technology)
• A 40-Gbit/s Decision IC Fabricated with 0.12-μm GaAs MESFETs
• Ultrahigh-Speed IC Technologies Using InP-Based HEMTs for Future Optical Communication Systems (Special Issue on Ultra-High-Speed IC and LSI Technology)
• Ultrahigh-Speed Integrated Circuits Using InP-Based HEMTs
• Ultrahigh-Speed Integrated Circuits Using InP-Based High-Electron-Mobility Transistors(HEMTs)
• A 24-Gsps 3-Bit Nyquist ADC Using InP HBTs for DSP-Based Electronic Dispersion Compensation(Optical)
• W-Band Active Integrated Antenna Oscillator Based on Full-Wave Design Methodology and 0.1-μm Gate InP-Based HEMTs(Millimeter-Wave Devices,Heterostructure Microelectronics with TWHM2005)
• DC Characteristics of InP HBTs under High-Temperature and Bias Stress
• High-Speed, Low-Power Lightwave Communication ICs Using InP/InGaAs Double-Heterojunction Bipolar Transistors (Special Issue on High-Frequency/speed Devices in the 21st Century)
• High-Performance Composite-Collector InP/InGaAs Heterojunction Bipolar Transistors
• Ultrahigh-Speed InP/InGaAs DHBTs with Very High Current Density(Heterostructure Microelectronics with TWHM2003)
• Systematic Study of Insulator Deposition Effect (Si_3N_4, SiO_2, AlN, and Al_2O_3) on Electrical Properties in AlGaN/GaN Heterostructures
• 70-Gbit/s Multiplexer and 50-Gbit/s Decision IC Modules Using InAlAs/InGaAs/InP HEMTs
• Ultra-Fast Optoelectronic Decision Circuit Using Resonant Tunneling Diodes and a Uni-Traveling-Carrier Photodiode (Special Issue on Integrated Electronics and New System Paradigms)
• A Large Output Voltage Swing of a Resonant Tunneling Flip-Flop Circuit Employing a Monostable-Bistable Transition Logic Element (MOBILE)
• A Novel Delayed Flip-Flop Circuit Using Resonant Tunneling Logic Gates
• High-Speed Static Frequency Divider Employing Resonant Tunneling Diodes and HEMTs
• High-Speed and Low-Power D-FF Employing MOBILEs : Monostable-Bistable Transition Logic Elements
• Monolithic integration of UTC-PDs and InP HBTs using Be ion implantation
• Direct Optical Injection Locking of a 100-GHz-Class Oscillator IC Using a Back-Illuminated InP/InGaAs HPT and Its Applications(MWP Devices)(Special Issue on Recent Progress in Microwave and Millimeter-wave Photonics Technologies)
• Highly Reliable Submicron InP-Based HBTs with over 300-GHz f_t
• High-performance and reliable InP/InGaAs HBTs operating at high current density (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• High-performance and reliable InP/InGaAs HBTs operating at high current density (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Thick On-Chip Interconnections by Cu-Damascene Processes Using a Photosensitive Polymer
• An Optoelectronic Clock Recovery Circuit Using a Resonant Tunneling Diode and a Uni-Traveling-Carrier Photodiode (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
• An Optoelectronic Clock Recovery Circuit Using a Resonant Tunneling Diode and a Uni-Traveling-Carrier Photodiode (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
• An Optoelectronic Logic Gate Monolithically Integrating Resonant Tunneling Diodes and a Uni-Traveling-Carrier Photodiode
• IC-Oriented Self-Aligned High-Performance AlGaAs/GaAs Ballistic Collection Transistors and Their Applications to High-Speed ICs (Special Issue on Heterostructure Electron Devices)
• Over-100-Gbit/s Multiplexing Operation of InP DHBT Selector IC Designed with High Collector-Current Density
• Over-10-dBm output uni-traveling-carrier photodiode module integrating a power amplifier for wireless transmissions in the 125-GHz band
• Carrier-Suppressed Return-to- Zero Pulse Generation Using Mode-Locked Lasers for 40-Gbit/s Transmission(Special Issue on 40 Gbit/s Optical Transmission Technologies)
• Study of a PMD Tolerance Extension by InP HBT Analog EDC IC without Adaptive Control in 43G DQPSK Transmission
• Study of a PMD tolerance extension by InP HBT analog EDC IC without adaptive control in 43G DQPSK transmission
• Study of a PMD tolerance extension by InP HBT analog EDC IC without adaptive control in 43G DQPSK transmission
• Accurate Evaluation of Silicon Planar Doping in InAlAs for InAlAs/InGaAs Modulation Doped Structure Grown by Metal Organic Chemical Vapor Deposition
• A 1.3-μm Optical Transceiver Diode (TRAD) Module for TCM Transmission Systems in Optical Access Networks (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
• Collapse of Quantized Conductance in a Mesoscopic Tomonaga-Luttinger Liquid
• A Monolithic Microwave-Integrated Circuit Doubler Using a Resonant-Tunneling High-Electron-Mobility Transistor
• An MMIC Resonant-Tunneling HEMT Doubler
• A 1.3-μm Optical Transceiver Diode (TRAD) Module for TCM Transmission Systems in Optical Access Networks (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
• 49-GHz Operation of an SCFL Static Frequency Divider Using High-Speed Interconnections and InP-Based HEMTs (Special Issue on Microwave and Millimeter Wave Technology)
• Highly Stable Device Characteristics of InP-Based Enhancement-Mode High Electron Mobility Transistors with Two-Step-Recessed Gates
• 30-nm-Gate InP-Based Lattice-Matched High Electron Mobility Transistors with 350 GHz Cutoff Frequency
• Improvement Recessed-Gate Structure for Sub-0.1-μm-Gate InP-Based High Electron Mobility Transistors
• Novel Gate-Recess Process for the Reduction of Parasitic Phenomena Due to Side-Etching in InAlAs/InGaAs HEMTs
• A Fully Monolithic Integrated 43-Gbit/s Clock and Data Recovery Circuit Using InAlAs/InGaAs/InP HEMTs
• Input Power Dependence of Large-Signal Microwave Characteristics of Resonant-Tunneling High Electron Mobility Transistors
• The Primary Structure of Cassowary (Casuarius casuarius) Goose Type Lysozyme(Biochemistry & Molecular Biology)
• A 24-GS/s 6-bit R-2R Current-Steering DAC in InP HBT Technology
• Millimeter-wave MMIC Technologies Exploring F-band Application(Session7: Millimeter-wave and Terahertz Devices)
• Millimeter-wave MMIC Technologies Exploring F-band Application(Session7: Millimeter-wave and Terahertz Devices)
• High Temperature Characteristics of Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Ultrathin Al_2O_3/Si_3N_4 Bilayer
• DC and RF Characteristics in Al_2O_3/Si_3N_4 Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors
• Al_2O_3/Si_3N_4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Structure : Low Gate Leakage Current with High Transconductance
• Comparison of AlGaN/GaN insulated gate heterostructure field-effect transistors with ultra-thin Al_2O_3/Si_3N_4 bilayer and with Si_3N_4 single layer
• Al_2O_3/Si_3N_4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Layers : Low Gate Leakage Current with High Transconductance Operation
• W-band Waveguide Amplifier Module with InP-HEMT MMIC for Millimeter-wave Applications
• High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal-Organic Vapor-Phase Epitaxy
• Double-Recess Structure with an InP Passivation Layer for 0.1-μm-Gate InP HEMTs( Heterostructure Microelectronics with TWHM2003)
• The InP-HEMT IC Technology for 40-Gbit/s Optical Communications
• The InP-HEMT IC Technology for 40-Gbit/s Optical Communications
• Frequency Dispersion in Drain Conductance of InAlAs/InGaAs HEMTs and Its Correlation with Impact Ionization
• High-Resolution Scanning Electron Microscopy Observation of Electrochemical Etching in the Formation of Gate Grooves for InP-Based Modulation-Doped Field-Effect Transistors
• InP-based High-speed Transistors and Their IC Applications
• Monolithic Integration of Resonant Tunneling Diodes, Schottky Barrier Diodes and 0.1-$\mu$m-gate High Electron Mobility Transistors for High-Speed ICs
• Purification and Characterization of Goose Type Lysozyme from Cassowary (Casuarlus casuarius) Egg White
• SCFL-Compatible 40-Gbit/s RTD/HEMT Selector Circuit
• Delta-Sigma Modulator Using a Resonant-Tunneling Diode Quantizer
• 0.05-μm-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel Effects
• High-Speed Uni-Traveling-Carrier Photodiodes Monolithically Integrated with InP Heterojunction Bipolar Transistors using Be Ion Implantation
• Highly Uniform Regrown In_Ga_As/AlAs/InAs Resonant Tunneling Diodes on In_Ga_As
• Uniformity of the High Electron Mobility Transistors and Resonant Tunneling Diodes Integrated on an InP Substrate Using an Epitaxial Structure Grown by Molecular Beam Epitaxy and Metalorganic Chemical Vapor Deposition
• Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs(Millimeter-Wave Devices,Heterostructure Microelectronics with TWHM2005)
• InP HEMT Technology for High-Speed Logic and Communications(Session 2 Compound Semiconductor Devices I,AWAD2006)
• InP HEMT Technology for High-Speed Logic and Communications(Session 2 Compound Semiconductor Devices I,AWAD2006)
• 50-Gbit/s Demultiplexer IC Module Using InAlAs/InGaAs/InP HEMTs
• Effects of Preamplifier Nonlinearity on PMD Equalization with Electronic Dispersion Compensation for 43G DQPSK
• Components in 0.5-μm-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications (電子デバイス)
• Components in 0.5-μm-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications (マイクロ波)
• High ESD Breakdown-Voltage InP HBT Transimpedance Amplifier IC for Optical Video Distribution Systems
• Wide dynamic range transimpedance amplifier IC for 100-G DP-QPSK optical links using 1-µm InP HBTs
• Components in 0.5-μm-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications
• Components in 0.5-μm-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications
• Metamorphic Resonant Tunneling Diodes and Its Application to Chaos Generator ICs
• High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal–Organic Vapor-Phase Epitaxy
• Metal-Organic Vapor-Phase Epitaxy Growth of InP-Based Resonant Tunneling Diodes with a Strained In0.8Ga0.2As Well and AlAs Barriers
• Metal-Organic Vapor-Phase Epitaxy of Pseudomorphic InAlP/InGaAs High Electron Mobility Transistor Wafers
• Frequency Dispersion in Drain Conductance of InAlAs/InGaAs Hight-Electron Mobility Transisters (HEMTs) and Its Relationship with Impact Ionization
• Al/AlN/InP Metal-Insulator-Semiconductor-Diode Characteristics with Amorphous AlN Films Deposited by Electron-Cyclotron-Resonance Sputtering
• Small and Low-Cost Dual-Rate Optical Triplexer for OLT Transceivers in 10G/1G Co-existing 10G-EPON Systems
• Performance of InP/InGaAs HBTs with a Thin Highly N-Type Doped Layer in the Emitter-Base Heterojunction Vicinity
• High Temperature Characteristics of Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Ultrathin Al2O3/Si3N4 Bilayer
• Suppression of short-channel effect in pseudomorphic In0.25Al0.75P/In0.75Ga0.25As high electron mobility transistors
• C-10-7 A-2^7-1PRBS Generator in InP-HBT Technology for High-Speed and Low-Power Applications
• High ESD Breakdown-Voltage InP HBT Transimpedance Amplifier IC for Optical Video Distribution Systems

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