Frequency Dispersion in Drain Conductance of InAlAs/InGaAs HEMTs and Its Correlation with Impact Ionization
スポンサーリンク
概要
- 論文の詳細を見る
- 2000-08-28
著者
-
KOSUGI Toshihiko
NTT Photonics Laboratories, NTT Corporation
-
ENOKI Takatomo
NTT Photonics Laboratories, NTT Corporation
-
YAMANE Yasuro
NTT Photonics Laboratories
-
Yamane Y
Ntt Electronics Corporation
-
Umeda Yohtaro
Ntt Photonics Laboratories
-
Umeda Y
Ntt Photonics Lab. Kanagawa Jpn
-
Enoki Takatomo
Ntt Photonics Laboratories
-
Suemitsu T
Ntt Photonics Lab. Kanagawa Jpn
-
Suemitsu Tetsuya
Ntt Photonics Laboratories
-
Umeda Yohtaro
Ntt Photonics Laboratories:(present Address)ntt Electronics Corporation
-
Kosugi Toshihiko
Ntt Photonics Laboratories
-
Kosugi Toshihiko
Ntt Photonics Laboratories Ntt Corporation
関連論文
- Exclusive OR/NOR IC for 40-Gbit/s Clock Recovery Circuit (Special Issue on Ultra-High-Speed IC and LSI Technology)
- Ultrahigh-Speed IC Technologies Using InP-Based HEMTs for Future Optical Communication Systems (Special Issue on Ultra-High-Speed IC and LSI Technology)
- Ultrahigh-Speed Integrated Circuits Using InP-Based HEMTs
- Ultrahigh-Speed Integrated Circuits Using InP-Based High-Electron-Mobility Transistors(HEMTs)
- W-Band Active Integrated Antenna Oscillator Based on Full-Wave Design Methodology and 0.1-μm Gate InP-Based HEMTs(Millimeter-Wave Devices,Heterostructure Microelectronics with TWHM2005)
- DC Characteristics of InP HBTs under High-Temperature and Bias Stress
- Systematic Study of Insulator Deposition Effect (Si_3N_4, SiO_2, AlN, and Al_2O_3) on Electrical Properties in AlGaN/GaN Heterostructures
- 70-Gbit/s Multiplexer and 50-Gbit/s Decision IC Modules Using InAlAs/InGaAs/InP HEMTs
- Monolithic integration of UTC-PDs and InP HBTs using Be ion implantation
- Thick On-Chip Interconnections by Cu-Damascene Processes Using a Photosensitive Polymer
- Over-100-Gbit/s Multiplexing Operation of InP DHBT Selector IC Designed with High Collector-Current Density
- Over-10-dBm output uni-traveling-carrier photodiode module integrating a power amplifier for wireless transmissions in the 125-GHz band
- Accurate Evaluation of Silicon Planar Doping in InAlAs for InAlAs/InGaAs Modulation Doped Structure Grown by Metal Organic Chemical Vapor Deposition
- 49-GHz Operation of an SCFL Static Frequency Divider Using High-Speed Interconnections and InP-Based HEMTs (Special Issue on Microwave and Millimeter Wave Technology)
- Highly Stable Device Characteristics of InP-Based Enhancement-Mode High Electron Mobility Transistors with Two-Step-Recessed Gates
- 30-nm-Gate InP-Based Lattice-Matched High Electron Mobility Transistors with 350 GHz Cutoff Frequency
- Improvement Recessed-Gate Structure for Sub-0.1-μm-Gate InP-Based High Electron Mobility Transistors
- Novel Gate-Recess Process for the Reduction of Parasitic Phenomena Due to Side-Etching in InAlAs/InGaAs HEMTs
- A Fully Monolithic Integrated 43-Gbit/s Clock and Data Recovery Circuit Using InAlAs/InGaAs/InP HEMTs
- Millimeter-wave MMIC Technologies Exploring F-band Application(Session7: Millimeter-wave and Terahertz Devices)
- Millimeter-wave MMIC Technologies Exploring F-band Application(Session7: Millimeter-wave and Terahertz Devices)
- High Temperature Characteristics of Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Ultrathin Al_2O_3/Si_3N_4 Bilayer
- DC and RF Characteristics in Al_2O_3/Si_3N_4 Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors
- Al_2O_3/Si_3N_4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Structure : Low Gate Leakage Current with High Transconductance
- Comparison of AlGaN/GaN insulated gate heterostructure field-effect transistors with ultra-thin Al_2O_3/Si_3N_4 bilayer and with Si_3N_4 single layer
- Al_2O_3/Si_3N_4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Layers : Low Gate Leakage Current with High Transconductance Operation
- Upper-bound Frequency for Measuring mm-Wave-Band Dielectric Characteristics of Thin Films on Semiconductor Substrates
- High-Frequency Characteristics of SrTiO_3 Thin Films in the mm-Wave Band
- Measurement of High-Frequency Dielectric Characteristics in the mm-Wave Band for Dielectric Thin Films on Semiconductor Substrates
- High-Frequency Characteristics of SrTiO_3 Thin Films in the mm-Wave Band
- Optical Characterization of Impact Ionization in Flip-Chip-Bonded InP-Based High Electron Mobility Transistors
- Effect of Epitaxial Layer Crystal Quality on DC and RF Characteristics of AlGaN/GaN Short-Gate High-Electron-Mobility Transistors on Sapphire Substrates
- Intrinsic Transit Delay and Effective Electron Velocity of AlGaN/GaN High Electron Mobility Transistors
- Improved Carrier Confinement by a Buried p-Layer in the AlGaN/GaN HEMT Structure
- W-band Waveguide Amplifier Module with InP-HEMT MMIC for Millimeter-wave Applications
- High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal-Organic Vapor-Phase Epitaxy
- Double-Recess Structure with an InP Passivation Layer for 0.1-μm-Gate InP HEMTs( Heterostructure Microelectronics with TWHM2003)
- The InP-HEMT IC Technology for 40-Gbit/s Optical Communications
- The InP-HEMT IC Technology for 40-Gbit/s Optical Communications
- Frequency Dispersion in Drain Conductance of InAlAs/InGaAs HEMTs and Its Correlation with Impact Ionization
- InP-Based Lightwave Communication ICs for 40 Gbit/s and Beyond (Special Issue on High-Frequency/speed Devices in the 21st Century)
- Gate and Recess Engineering for Ultrahigh-Speed InP-Based HEMTs (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- High-Resolution Scanning Electron Microscopy Observation of Electrochemical Etching in the Formation of Gate Grooves for InP-Based Modulation-Doped Field-Effect Transistors
- InP-based High-speed Transistors and Their IC Applications
- Delta-Sigma Modulator Using a Resonant-Tunneling Diode Quantizer
- 0.05-μm-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel Effects
- Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs(Millimeter-Wave Devices,Heterostructure Microelectronics with TWHM2005)
- Influence of Hole Accumulation on Source Resistance, Kink Effect and On-State Breakdown of InP-Based High Electron Mobility Transistors : Light Irradiation Study
- InP HEMT Technology for High-Speed Logic and Communications(Compound Semiconductor and Power Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
- InP HEMT Technology for High-Speed Logic and Communications(Session 2 Compound Semiconductor Devices I,AWAD2006)
- InP HEMT Technology for High-Speed Logic and Communications(Session 2 Compound Semiconductor Devices I,AWAD2006)
- 50-Gbit/s Demultiplexer IC Module Using InAlAs/InGaAs/InP HEMTs
- High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal–Organic Vapor-Phase Epitaxy
- Metal-Organic Vapor-Phase Epitaxy Growth of InP-Based Resonant Tunneling Diodes with a Strained In0.8Ga0.2As Well and AlAs Barriers
- Metal-Organic Vapor-Phase Epitaxy of Pseudomorphic InAlP/InGaAs High Electron Mobility Transistor Wafers
- Frequency Dispersion in Drain Conductance of InAlAs/InGaAs Hight-Electron Mobility Transisters (HEMTs) and Its Relationship with Impact Ionization
- Al/AlN/InP Metal-Insulator-Semiconductor-Diode Characteristics with Amorphous AlN Films Deposited by Electron-Cyclotron-Resonance Sputtering
- High Temperature Characteristics of Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Ultrathin Al2O3/Si3N4 Bilayer
- Optical Characterization of Impact Ionization in Flip-Chip-Bonded InP-Based High Electron Mobility Transistors
- Suppression of short-channel effect in pseudomorphic In0.25Al0.75P/In0.75Ga0.25As high electron mobility transistors
- Effect of Epitaxial Layer Crystal Quality on DC and RF Characteristics of AlGaN/GaN Short-Gate High-Electron-Mobility Transistors on Sapphire Substrates
- Intrinsic Transit Delay and Effective Electron Velocity of AlGaN/GaN High Electron Mobility Transistors
- An optically clocked transistor array (OCTA) for 40-Gb/s, bidirectional serial-to-parallel conversion of asynchronous burst optical packets