Effect of Epitaxial Layer Crystal Quality on DC and RF Characteristics of AlGaN/GaN Short-Gate High-Electron-Mobility Transistors on Sapphire Substrates
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概要
- 論文の詳細を見る
The DC and RF characteristics of short-gate high-electron-mobility transistors (HEMTs) formed on four AlGaN/GaN wafers grown on sapphire substrates with different crystal quality have been investigated. Atomic force microscopy observation revealed many pits and trenches on the AlGaN surface, and the morphology of each sample was distinct. There were also differences in electron mobility and sheet carrier concentration. However, the gate length dependences of the measured transconductance and cut-off frequency were virtually the same. For a more detailed investigation, we subtracted the source resistance and AlGaN thickness contributions from measured DC and performed a delay time analysis for the RF characteristics. The results indicate that the intrinsic performance of HEMTs was independent of the surface morphology and that effective electron velocity ranged from 1.4 to $1.8\times 10^{7}$ cm/s.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-12-15
著者
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Shigekawa Naoteru
Ntt Photonic Lab. Kanagawa Jpn
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Shiojima Kenji
Ntt Photonics Laboratories
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Suemitsu Tetsuya
Ntt Photonics Laboratories
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Suemitsu Tetsuya
NTT Photonics Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Makimura Takashi
NTT Photonics Laboratories
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