Gate and Recess Engineering for Ultrahigh-Speed InP-Based HEMTs (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)

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概要

• 論文の詳細を見る

• InP-based high electron mobility transistors (HEMTs) with gate lengths reduced to 30nm were fabricated and characterized, and the effect of the gate recess on the high-frequency characteristics was studied. The cutoff frequency, which is regarded as a function of the gate length and the average carrier velocity in a first-order approximation, depends on the size of the gate recess when the gate length becomes short. The size of the gate recess is optimized by taking the feed-back capacitance and the parasitic resistance into account. For HEMTs having the gate recess with an InP surface, and appropriate widening of the gate recess gives a record cutoff frequency of 368 GHz for the 30-nm-gate HEMTs with a lattice-matched channel.

• 社団法人電子情報通信学会の論文
• 2001-10-01

著者

• Ishii T

  Ntt System Electronics Laboratories

• Ishii Y

  Waseda Univ. Tokyo Jpn

• Ishii Tetsuyoshi

  Ntt Basic Research Laboratories : (present Adress) Ntt Photonics Laboratories

• Ishii Tetsuyoshi

  Ntt Basic Research Laboratories

• Ishii Y

  Yamaguchi Univ. Ube‐shi Jpn

• Suemitsu T

  Ntt Photonics Lab. Kanagawa Jpn

• Suemitsu Tetsuya

  Ntt Photonics Laboratories

• ISHII Yasunobu

  NTT Photonics Laboratories

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