Ultrahigh-Speed IC Technologies Using InP-Based HEMTs for Future Optical Communication Systems (Special Issue on Ultra-High-Speed IC and LSI Technology)

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概要

• 論文の詳細を見る

• This paper presents the technologies for over-40-Gbit/s operation of InP-based HEMT ICs for future optical communication systems. High-speed interconnection using low-permittivity benzocyclobutene (BCB) film as an inter-layer insulator decreases interconnection delay and results in high-speed operation of digital circuits. A static frequency divider and a 2:l multiplexer using this novel interconnection demonstrate 49-GHz and 80-Gbit/s operation, respectively. Ultrahigh-speed digital/analog ICs fabricated using the HEMTs were used in 40Gbit/s optical transmission experiment and showed good bit-error-rate performance. A novel two-step recess process for gate recess etching considerably improves the performance of InP-based HEMTs and is found to be promising for future ultrashort-gate devices.

• 社団法人電子情報通信学会の論文
• 1999-03-25

著者

• Otsuji Taiichi

  Ntt Network Innovation Laboratories

• Otsuji Taiichi

  Ntt Optical Network Systems Laboratories

• ENOKI Takatomo

  NTT System Electronics Laboratories

• UMEDA Yohtaro

  NTT System Electronics Laboratories

• SUEMITSU Tetsuya

  NTT System Electronics Laboratories

• YOKOYAMA Haruki

  NTT System Electronics Laboratories

• ISHII Yasunobu

  NTT System Electronics Laboratories

• Ishii Y

  Waseda Univ. Tokyo Jpn

• Umeda Y

  Ntt Photonics Lab. Kanagawa Jpn

• Enoki Takatomo

  Ntt Photonics Laboratories

• Yokoyama H

  Kddi R&d Laboratories Inc.

• Ishii Y

  Yamaguchi Univ. Ube‐shi Jpn

• Suemitsu T

  Ntt Photonics Lab. Kanagawa Jpn

• Umeda Yohtaro

  Ntt Photonics Laboratories:(present Address)ntt Electronics Corporation

• Otsuji T

  Kyushu Inst. Of Technol. Iizuka‐shi Jpn

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