Performance and Stability of MOVPE-Grown Carbon-Doped InP/InGaAs HBT's Dehydrogenated by an Anneal after Emitter Mesa Formation
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-03-30
著者
-
Yamahata Shoji
Ntt Photonics Laboratories
-
Ito Hiroki
Development Department Mitsubishi Electric Corporation
-
Ito H
Department Of Energy And Environmental Science Graduate School Of Utsunomiya University
-
ISHII Yasunobu
NTT System Electronics Laboratories
-
NAKAJIMA Hiroki
NTT Photonics Laboratories
-
Nakajima H
Ntt Photonics Laboratories
-
KURISHIMA Kenji
NTT System Electronics Laboratories
-
YAMAHATA Shoji
NTT System Electronics Laboratories
-
NAKAJIMA Hiroki
NTT System Electronics Laboratories
-
ITO Hiroshi
NTT System Electronics Laboratories
-
Ishii Y
Waseda Univ. Tokyo Jpn
-
Ishii Y
Yamaguchi Univ. Ube‐shi Jpn
-
Yamaguchi S
Faculty Of Agriculture University Of Ehime
-
Kurishima Kenji
Ntt Photonics Laboratories Ntt Corporation
関連論文
- Low-Temperature Metalorganic Chemical Vapor Deposition Growth of InGaAs for a Non-Alloyed Ohmic Contact to n-GaAs
- Generation of Sub-picosecond GeV Electron Bunches by Laser Acceleration in Vacuum
- Reflection-Induced Light Correlation in Spontaneous Emission in Front of a Mirror
- Laser Emission from Dye-Doped Small Spheres by Ultraviolet N_2 Laser Pumping
- Ultrahigh-Speed IC Technologies Using InP-Based HEMTs for Future Optical Communication Systems (Special Issue on Ultra-High-Speed IC and LSI Technology)
- Rotary Ultrasonic Motor Using Symmetric Contour Vibration of Rectangular Plate
- Ultrasonic Flat Motor Using Coupling of Longitudinal and Flexural Vibration Modes
- Resonant Frequency Deviation of Ultrasonic Flat Motor Caused by Rotor Pressure : Ultrasonic Motor, Actuator and Transducer
- Rotary Ultrasonic Flat Motor : High Power Ultrasonics
- Reversible Ultrasonic Flat Motor Drived by Single Phase Driver : P: PIEZOELECTRICS
- A 24-Gsps 3-Bit Nyquist ADC Using InP HBTs for DSP-Based Electronic Dispersion Compensation(Optical)
- DC Characteristics of InP HBTs under High-Temperature and Bias Stress
- High-Speed, Low-Power Lightwave Communication ICs Using InP/InGaAs Double-Heterojunction Bipolar Transistors (Special Issue on High-Frequency/speed Devices in the 21st Century)
- Ultrahigh-Speed InP/InGaAs DHBTs with Very High Current Density(Heterostructure Microelectronics with TWHM2003)
- Monolithic integration of UTC-PDs and InP HBTs using Be ion implantation
- Direct Optical Injection Locking of a 100-GHz-Class Oscillator IC Using a Back-Illuminated InP/InGaAs HPT and Its Applications(MWP Devices)(Special Issue on Recent Progress in Microwave and Millimeter-wave Photonics Technologies)
- Highly Reliable Submicron InP-Based HBTs with over 300-GHz f_t
- High-performance and reliable InP/InGaAs HBTs operating at high current density (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- High-performance and reliable InP/InGaAs HBTs operating at high current density (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Performance and Stability of MOVPE-Grown Carbon-Doped InP/InGaAs HBT's Dehydrogenated by an Anneal after Emitter Mesa Formation
- Performance and Stability of MOVPE-Grown Carbon-Doped InP/InGaAs HBT's De-Hydrogenated by an Anneal after Emitter Mesa Formation
- Heavily Carbon Doped Base InP/InGaAs Heterojunction Bipolar Transistors Grown by Two-Step Metalorganic Chemical Vapor Deposition
- Ultrahigh-Speed InP/InGaAs Double-Heterostructure Bipolar Transistors and Analyses of Their Operation
- Growth and Characterization of High-Speed Carbon-Doped-Base InP/InGaAs Heterojunction Bipolar Transistors by Metalorganic Chemical Vapor Deposition
- Growth, Design and Performance of InP-Based Heterostructure Bipolar Transistors
- Effects of a Compositionally-Graded In_xGa_As Base in Abrupt-Emitter InP/InGaAs Heterojunction Bipolar Transistors
- Lateral Scaling Investigation on DC and RF Performances of InP/InGaAs Heterojunction Bipolar Transistors
- Slicing and Adding of Short Microwave Pulse by Laser Produced Plasma : Nuclear Science, Plasmas, and Electric Discharges
- IC-Oriented Self-Aligned High-Performance AlGaAs/GaAs Ballistic Collection Transistors and Their Applications to High-Speed ICs (Special Issue on Heterostructure Electron Devices)
- High-Performance Small-Scale Collector-Up AlGaAs/ GaAs HBT's with a Carbon-Doped Base Fabricated Using Oxygen-lon Implantation (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
- Over-100-Gbit/s Multiplexing Operation of InP DHBT Selector IC Designed with High Collector-Current Density
- Alkylation and Acylation of the 1,2,3-Triazole Ring
- Enlerged Frequency Upshift from DC to AC Radiation Converter using Boundary Effect of Plasma-filled Waveguide
- Proton Acceleration in Transverse Laser Wake Fields
- Further Frequency Upshift in DC to AC Radiation Converter by Perpendicular DC Magnetic Field
- Emission of Short Microwave Pulse Radiated by Interaction between Periodic Static Electric Field and Relativistic Ionization Front
- Electronic NO_2 Sensor Using Merocyanine-Doped Langmuir Blodgett Films
- Accurate Evaluation of Silicon Planar Doping in InAlAs for InAlAs/InGaAs Modulation Doped Structure Grown by Metal Organic Chemical Vapor Deposition
- Ionized Cluster Beam Deposition Source for Aluminum and Aluminum Oxide Formation : Ion Beam Process
- Ionized Cluster Beam Deposition Source for Aluminum and Aluminum Oxide Formation
- Selenium Thin-Film Solar Cell
- Selenium Thin Film Transistor
- Selenium Thin Film Solar Cell : I-3: NEW STRUCTURE AND ADVANCED MATERIAL (1)
- 49-GHz Operation of an SCFL Static Frequency Divider Using High-Speed Interconnections and InP-Based HEMTs (Special Issue on Microwave and Millimeter Wave Technology)
- Highly Stable Device Characteristics of InP-Based Enhancement-Mode High Electron Mobility Transistors with Two-Step-Recessed Gates
- 30-nm-Gate InP-Based Lattice-Matched High Electron Mobility Transistors with 350 GHz Cutoff Frequency
- Improvement Recessed-Gate Structure for Sub-0.1-μm-Gate InP-Based High Electron Mobility Transistors
- Novel Gate-Recess Process for the Reduction of Parasitic Phenomena Due to Side-Etching in InAlAs/InGaAs HEMTs
- Expanded-Bed Protein Refolding Using a Solid-Phase Artificial Chaperone
- Monitoring of the Refolding Process for Immobilized Firefly Luciferase with a Biosensor Based on Surface Plasmon Resonance
- Electron Velocity Overshoot Effect in Collector Depletion Layers of InP/InGaAs Heterojunction Bipolar Transistors
- Breathing Monitor Using Dye-Doped Optical Fiber
- Layered-Oxide-Isolation (LOXI) Metal-Semiconductor Field Effect Transistor (MESFET) for Low Parasitic Source-Drain Capacitance
- Upper-bound Frequency for Measuring mm-Wave-Band Dielectric Characteristics of Thin Films on Semiconductor Substrates
- High-Frequency Characteristics of SrTiO_3 Thin Films in the mm-Wave Band
- Measurement of High-Frequency Dielectric Characteristics in the mm-Wave Band for Dielectric Thin Films on Semiconductor Substrates
- High-Frequency Characteristics of SrTiO_3 Thin Films in the mm-Wave Band
- Second- and Third-Harmonic Generation of Nd:Glass Laser in Fast Red ITR Organic Crystal Fiber : Waves, Optics and Quantum Electronics
- Electro-Optic Intensity Modulator Using a Novel Urethane-Urea Copolymer
- Gate and Recess Engineering for Ultrahigh-Speed InP-Based HEMTs (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- High-Resolution Scanning Electron Microscopy Observation of Electrochemical Etching in the Formation of Gate Grooves for InP-Based Modulation-Doped Field-Effect Transistors
- InP-based High-speed Transistors and Their IC Applications
- Preparation of Nd-Doped SiO_2 Glasses by Axial Injection Plasma Torch CVD and Their Fluorescence Properties
- Fluorescence and its Nd^ Concentration Dependence of Nd-Doped SiO_2 Glasses Prepared by Plasma Torch CVD
- Preparation of Nd-Doped SiO_2 Glass by Plasma Torch CVD
- The Korean Tea Plant (Camellia sinensis) : RFLP Analysis of Genetic Diversity and Relationship to Japanese Tea
- 0.05-μm-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel Effects
- Novel Channel Structures for High Frequency InP-Based HFETs (Special Issue on Heterostructure Electron Devices)
- High-Speed Uni-Traveling-Carrier Photodiodes Monolithically Integrated with InP Heterojunction Bipolar Transistors using Be Ion Implantation
- Compact Monolithic Frequency Converters for a V-Band Transmitter/Receiver (Special Issue on Millimeter-wave Short-range Application Systems Technology)
- Dual-Frequency Matching Technique and Its Application to an Octave-Band (30-60 GHz) MMIC Amplifier
- Fiber Humidity Sensor Using Fluorescent Dye-Doped Plastics
- High-Performance Composite-Collector InP/InGaAs Heterojunction Bipolar Transistors
- Low-Turn-on-Voltage Heterojunction Bipolar Transistors with a C-Doped InGaAsSb Base Grown by Metalorganic Chemical Vapor Deposition (Special Issue : Solid State Devices and Materials (2))
- 0.25-μm-Emitter InP Heterojunction Bipolar Transistors with a Thin Ledge Structure
- Components in 0.5-μm-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications (電子デバイス)
- Components in 0.5-μm-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications (マイクロ波)
- Synthesis of (.+-.)-8-Deisopropyladunctin B
- Components in 0.5-μm-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications
- A low-power wideband InP-HBT 27-1 PRBS generator
- Components in 0.5-μm-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications
- Performance of InP/InGaAs HBTs with a Thin Highly N-Type Doped Layer in the Emitter-Base Heterojunction Vicinity
- Continuity-Equation Analysis of Hot Electron Base Transport in InP/InGaAs Heterojunction Bipolar Transistors