Novel Channel Structures for High Frequency InP-Based HFETs (Special Issue on Heterostructure Electron Devices)

概要

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We discuss delay times derived from the current gain cutoff frequency of a heterostructure field effect transistor and describe three types of novel channel structures for millimeter-wave InP-based HFETs. The first structure discussed is a lattice-matched InGaAs HEMT with high state-of-the art performance. The second structure is an InAs-inserted InGaAs HEMT which harnesses the superior transport properties of InAs. Fabricated devices show high electron mobility of 12,800 cm^2 / Vs and high transconductance over 1.4 S / mm for a 0.6-μm-gate length. The effective saturation velocity in the device derived from the current gain cutoff frequency in 3.0×10^7 cm / s. The third one is an InGaAs / InP double-channel HFET that utilizes the superior transport properties of InP at a high electric field. Fabricated double-channel devices show kink-free characteristics, high carrier density of 4.5×10^<12> cm^<-2> and high transconductance of 1.3 S / mm for a 0.6-μm-gate length. The estimated effective saturation velocity in these devices is 4.2×10^7 cm / s. Also included is a discussion of the current gain cutoff frequency of ultra-short channel devices.
社団法人電子情報通信学会の論文
1993-09-25