In0.75Ga0.25As Quantum Point Contacts Utilizing Wrap-Gate Geometry
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概要
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A fabrication technique for quantum point contacts (QPCs) in an InGaAs/InAlAs two-dimensional electron gas heterostructure is reported. The key challenge in realizing a well-behaved QPC is efficient electrostatic control of a one-dimensional channel using the gate electrode. The fabricated QPCs employ a 100-nm-wide mesa constriction and a gate electrode that wraps around the constriction for three-dimensional electric-field gating. In addition, conformal aluminum-oxide growth by atomic layer deposition is employed to suppress gate leakage while minimizing the interface state density. The wrap-gate QPCs show clear conductance steps, demonstrating well-defined quantized transverse modes in the InGaAs-based one-dimensional channel.
- 2012-02-25
著者
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SUGIYAMA Hiroki
NTT Photonics Laboratories
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Harada Yuichi
Ntt Basic Research Laboratories
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Akazaki Tatsushi
Ntt Basic Research Laboratories
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Irie Hiroshi
Ntt Basic Research Laboratories Ntt Corporation
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Harada Yuichi
NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
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Sugiyama Hiroki
NTT Photonics Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
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