Beating Analysis of Shubnikov de Haas Oscillation in In0.53Ga0.47As Double Quantum Well toward Spin Filter Applications
スポンサーリンク
概要
- 論文の詳細を見る
We recently determined the values of intrinsic spin-orbit (SO) parameters for In0.52Al0.48As/In0.53Ga0.47As(10nm)/In0.52Al0.48As (InGaAs/InAlAs) quantum wells (QW), lattice-matched to (001) InP, from the weak localization/antilocalization analysis of the low-temperature magneto-conductivity measurements [1]. We have then studied the subband energy spectra for the InGaAs/InAlAs double QW system from beatings in the Shubnikov de Haas (SdH) oscillations. The basic properties obtained here for the double QW system provides useful information for realizing nonmagnetic spin-filter devices based on the spin-orbit interaction [2].
著者
-
Sekine Yoshiaki
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
-
SUGIYAMA Hiroki
NTT Photonics Laboratories
-
Matsuura Toru
Department Of Applied Physics Hokkaido University
-
Faniel Sebastien
Icteam Institute The Universite Catholique De Louvain
-
Mineshige Shunsuke
Division Of Electronics For Informatics Graduate School Of Information Science And Technology Hokkaido University
-
Koga Takaaki
Division Of Electronics For Informatics Graduate School Of Information Science And Technology Hokkaido University
-
Souma Satofumi
Department Of Electrical And Electronic Engineering Kobe University
-
SOUMA Satofumi
Department of Electrical and Electronic Engineering, Kobe University
関連論文
- Half-Integer Quantum Hall Effect in Gate-Controlled Epitaxial Graphene Devices
- Detection of Magnetic Domain Wall in a Permalloy Wire by the Local Hall Effect
- Velocity Measurements of Magnetic Domain Wall by Local Hall Effect
- Electric-Field-Controllable Spin Interferometer Based on the Rashba Spin-Orbit Interaction
- Magnetization Reversal Process of Submicrometer-Scale Hall Bars of Ferromagnetic Semiconductor p-In_Mn_As
- Metalorganic Vapor Phase Epitaxy Growth of InAlAsSb on InP
- Fundamental oscillations at 〜900 GHz with low bias voltages in RTDs having spike-doped structures(Session 3A : Emerging Device Technology 2)
- 27pTX-9 Experimental study of spin interference phenomena in InGaAs/InAlAs rectangular loop arrays
- 26pZC-4 Mesoscopic spin Hall effect in two- and four-probe ballistic semiconductor nanostructures with Rashba spin-orbit coupling
- Fullband Simulation of Nano-Scale MOSFETs Based on a Non-equilibrium Green's Function Method
- Sub-Terahertz Resonant Tunneling Diode Oscillators Integrated with Tapered Slot Antennas for Horizontal Radiation
- Fundamental oscillations at 〜900 GHz with low bias voltages in RTDs having spike-doped structures(Session 3A : Emerging Device Technology 2)
- Sub-Terahertz Resonant Tunneling Diode Oscillators with High Output Power (-200μW) Using Offset-Fed Slot Antenna and High Current Density
- Fundamental Oscillation of up to 831GHz in GaInAs/AlAs Resonant Tunneling Diode
- Observation of Band Gap in Epitaxial Bilayer Graphene Field Effect Transistors
- High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal-Organic Vapor-Phase Epitaxy
- Atomic Structure and Physical Properties of Epitaxial Graphene Islands Embedded in SiC(0001) Surfaces
- Theoretical study on magnetoelectric and thermoelectric properties for graphene devices (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
- High Output Power (-400μW) Oscillators at around 550GHz Using Resonant Tunneling Diodes with Graded Emitter and Thin Barriers
- Thermal Diffusion of Si Atoms in Delta-Doped n-Type InAlAs Grown by Metal-Organic Vapor-Phase Epitaxy
- Low-Turn-on-Voltage Heterojunction Bipolar Transistors with a C-Doped InGaAsSb Base Grown by Metalorganic Chemical Vapor Deposition (Special Issue : Solid State Devices and Materials (2))
- Electrical Characterization of Bilayer Graphene Formed by Hydrogen Intercalation of Monolayer Graphene on SiC(0001) (Special Issue : Solid State Devices and Materials (1))
- In_Ga_As Quantum Point Contacts Utilizing Wrap-Gate Geometry
- Estimation of Transit Time in Terahertz Oscillating Resonant Tunneling Diodes with Graded Emitter and Thin Barriers
- In0.75Ga0.25As Quantum Point Contacts Utilizing Wrap-Gate Geometry
- Beating Analysis of Shubnikov de Haas Oscillation in In0.53Ga0.47As Double Quantum Well toward Spin Filter Applications
- Beating Analysis of Shubnikov de Haas Oscillation in In_Ga_As Double Quantum Well toward Spin Filter Applications
- Fundamental oscillation up to 1.08THz in resonant tunneling diodes with high-indium-composition transit layers for reduction of transit delay
- High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal–Organic Vapor-Phase Epitaxy
- Magnetization Reversal Process of Submicrometer-Scale Hall Bars of Ferromagnetic Semiconductor $p$-In0.97Mn0.03As
- Metal-Organic Vapor-Phase Epitaxy Growth of InP-Based Resonant Tunneling Diodes with a Strained In0.8Ga0.2As Well and AlAs Barriers
- Metal-Organic Vapor-Phase Epitaxy of Pseudomorphic InAlP/InGaAs High Electron Mobility Transistor Wafers
- Extremely High Peak Current Densities of over $1\times 10^{6}$ A/cm2 in InP-Based InGaAs/AlAs Resonant Tunneling Diodes Grown by Metal–Organic Vapor-Phase Epitaxy
- Metalorganic Vapor Phase Epitaxy Growth of InAlAsSb on InP
- Growth of High Electron Mobility Transistor Structure with InAlP Carrier Supply Layer
- Suppression of short-channel effect in pseudomorphic In0.25Al0.75P/In0.75Ga0.25As high electron mobility transistors
- A parallel-to-serial converter based on a differentially-operated optically clocked transistor array