High Output Power (-400μW) Oscillators at around 550GHz Using Resonant Tunneling Diodes with Graded Emitter and Thin Barriers

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概要

• 論文の詳細を見る
• 2011-06-25

著者

• Asada Masahiro

  Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology

• SUGIYAMA Hiroki

  NTT Photonics Laboratories

• Suzuki Safumi

  Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology

• Yokoyama Haruki

  Ntt Photonics Lab. Kanagawa Jpn

• Shiraishi Masato

  Interdisciplinary Graduate School Of Science And Technology Tokyo Institute Of Technology

• Shiraishi Masato

  Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology

• SHIBAYAMA Hirotaka

  Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology

• ISHIGAKI Kaname

  Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology

• Ishigaki Kaname

  Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology

• Sugiyama Hiroki

  Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology

関連論文

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• Sub-Terahertz Resonant Tunneling Diode Oscillators Integrated with Tapered Slot Antennas for Horizontal Radiation
• Increase in Drive Current by Pt/W Protection on Short-Channel Schottky Source/Drain Metal-Oxide-Semiconductor Field-Effect Transistors with Metal Gate
• Proposal and Analysis of a Traveling-Wave Amplifier in Terahertz Range Using Two-Dimensional Electron Gas
• Fundamental oscillations at 〜900 GHz with low bias voltages in RTDs having spike-doped structures(Session 3A : Emerging Device Technology 2)
• Sub-Terahertz Resonant Tunneling Diode Oscillators with High Output Power (-200μW) Using Offset-Fed Slot Antenna and High Current Density
• Fundamental Oscillation of up to 831GHz in GaInAs/AlAs Resonant Tunneling Diode
• Coherent Power Combination in Multi-Element Sub-Terahertz Resonant Tunneling Diode Oscillators Coupled with Metal-Insulator-Metal Stub Structure
• Frequency Increase of Resonant Tunneling Diode Oscillators in Sub-THz and THz Range Using Thick Spacer Layers
• Dependence of Drain Current on Gate Oxide Thickness of P-Type Vertical PtSi Schottky Source/Drain Metal Oxide Semiconductor Field-Effect Transistors(Semiconductors)
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• High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal-Organic Vapor-Phase Epitaxy
• Experiment and Theoretical Analysis of Voltage-Controlled Sub-THz Oscillation of Resonant Tunneling Diodes(THz Devices,Heterostructure Microelectronics with TWHM2005)
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• Heterodyne Mixing of Sub-Terahertz Output Power from Two Resonant Tunneling Diodes Using InP Schottky Barrier Diode
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• High Output Power (-400μW) Oscillators at around 550GHz Using Resonant Tunneling Diodes with Graded Emitter and Thin Barriers
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• Metal-Organic Vapor-Phase Epitaxy of Pseudomorphic InAlP/InGaAs High Electron Mobility Transistor Wafers
• Mechanism of Superior Suppression Effect on Gate Current Leakage in Ultrathin Al2O3/Si3N4 Bilayer-Based AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors
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• Room-Temperature Electroluminescence from Single-Period (CdF2/CaF2) Inter-Subband Quantum Cascade Structure on Si substrate
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• Growth of High Electron Mobility Transistor Structure with InAlP Carrier Supply Layer
• Voltage-Controlled Harmonic Oscillation at About 1 THz in Resonant Tunneling Diodes Integrated with Slot Antennas
• Coherent Power Combination in Highly Integrated Resonant Tunneling Diode Oscillators with Slot Antennas
• Experimental and Theoretical Investigation of the Dependence of Oscillation Characteristics on Structure of Integrated Slot Antennas in Sub-terahertz and Terahertz Oscillating Resonant Tunneling Diodes
• Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors (Special Issue : Solid State Devices and Materials)
• Suppression of short-channel effect in pseudomorphic In0.25Al0.75P/In0.75Ga0.25As high electron mobility transistors
• Mutual Injection Locking between Sub-THz Oscillating Resonant Tunneling Diodes
• A parallel-to-serial converter based on a differentially-operated optically clocked transistor array

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