Extremely High Peak Current Densities of over $1\times 10^{6}$ A/cm2 in InP-Based InGaAs/AlAs Resonant Tunneling Diodes Grown by Metal–Organic Vapor-Phase Epitaxy

概要

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InP-based InGaAs/AlAs resonant tunneling diodes (RTDs) with extremely high peak current density ($ j_{\text{P}}$) were grown by metal–organic vapor-phase epitaxy. High-temperature growth at 660 °C provides high-quality heterointerfaces and excellent current–voltage ($I$–$V$) characteristics. To obtain extremely high $ j_{\text{P}}$, the structural parameter dependence of $I$–$V$ characteristics on barrier and spacer thicknesses and emitter-doping concentration were examined. Clear exponential dependence of $ j_{\text{P}}$ on barrier thickness was obtained in the barrier-thickness range from 1.2 to 2.8 nm. The reduction of spacer thickness to 2 nm increased $ j_{\text{P}}$ without deteriorating the peak-to-valley current ratio (PVR). An investigation of Si dopant diffusion into double-barrier regions at the growth temperature supports the validity of reducing spacer thickness. The $ j_{\text{P}}$ increased as Si doping concentration was increased from $1\times 10^{18}$ to $6\times 10^{18}$ cm-3 in InGaAs emitters. The highest $ j_{\text{P}}$ reached $1.29\times 10^{6}$ A/cm2 with a PVR of 1.5 in a RTD at room temperature with barrier and spacer thicknesses of 1.4 and 2 nm and Si doping concentration in the emitter of $6\times 10^{18}$ cm-3.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2010-05-25