Reduction of In Composition in Heavily Zn-Doped InAlGaAs Layers Grown at Low Temperature by Metalorganic Chemical Vapor Deposition
スポンサーリンク
概要
- 論文の詳細を見る
Growth of heavily Zn-doped InAlGaAs at low temperature (560 °C) by metalorganic chemical vapor deposition (MOCVD) is investigated. The lattice constant contracts and the growth rate decreases with increasing dithylzinc (DEZn) flow rate. To clarify the reason, the growth rates of InAs, AlAs, and GaAs components are examined. The growth rates of AlAs and GaAs components are almost constant; only that of InAs dramatically decreases when the DEZn flow increases. This indicates that the incorporation of In is suppressed by the DEZn supply. The doping behavior during the growth is well fit by the surface adsorption-trapping model, which suggests that excess Zn atoms on the growth surface induce the reduction of the InAs component.
- 2012-02-25
著者
-
Ida Minoru
Ntt Photonics Laboratories Ntt Corporation
-
Shigekawa Naoteru
Ntt Photonic Lab. Kanagawa Jpn
-
Yokoyama Haruki
Ntt Photonics Lab. Kanagawa Jpn
-
Ida Minoru
NTT Photonics Laboratories, Atsugi, Kanagawa 243-0198, Japan
-
Hoshi Takuya
NTT Photonics Laboratories, Atsugi, Kanagawa 243-0198, Japan
関連論文
- P2-10 SAW-Semiconductor UV Sensor Using GaN Film(Short oral presentation for posters)
- A 24-Gsps 3-Bit Nyquist ADC Using InP HBTs for DSP-Based Electronic Dispersion Compensation(Optical)
- DC Characteristics of InP HBTs under High-Temperature and Bias Stress
- Ultrahigh-Speed InP/InGaAs DHBTs with Very High Current Density(Heterostructure Microelectronics with TWHM2003)
- Monolithic integration of UTC-PDs and InP HBTs using Be ion implantation
- Direct Optical Injection Locking of a 100-GHz-Class Oscillator IC Using a Back-Illuminated InP/InGaAs HPT and Its Applications(MWP Devices)(Special Issue on Recent Progress in Microwave and Millimeter-wave Photonics Technologies)
- Fundamental oscillations at 〜900 GHz with low bias voltages in RTDs having spike-doped structures(Session 3A : Emerging Device Technology 2)
- Over-100-Gbit/s Multiplexing Operation of InP DHBT Selector IC Designed with High Collector-Current Density
- Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the AlN Interlayer Thickness
- Sub-Terahertz Resonant Tunneling Diode Oscillators Integrated with Tapered Slot Antennas for Horizontal Radiation
- Fundamental oscillations at 〜900 GHz with low bias voltages in RTDs having spike-doped structures(Session 3A : Emerging Device Technology 2)
- Sub-Terahertz Resonant Tunneling Diode Oscillators with High Output Power (-200μW) Using Offset-Fed Slot Antenna and High Current Density
- Fundamental Oscillation of up to 831GHz in GaInAs/AlAs Resonant Tunneling Diode
- InAlN barrier layer for GaN-based FET : InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface
- InAlN barrier layer for GaN-based FET : InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface
- DC and RF Characteristics in Al_2O_3/Si_3N_4 Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors
- Intrinsic Transit Delay and Effective Electron Velocity of AlGaN/GaN High Electron Mobility Transistors
- New Stacked Metal--Insulator--Metal Capacitor with High Capacitance Density for Future InP-Based ICs
- High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal-Organic Vapor-Phase Epitaxy
- Analysis of Passivation-Film-Induced Stress Effects on Electrical Properties in AlGaN/GaN HEMTs
- Compressively Strained InxAl1-xN/Al0.22Ga0.78N/GaN ($x = 0.245--0.325$) Heterostructure Field Effect Transistors with Regrown AlGaN Contact Layers
- Quantum-Well Photoemission Media for Terabit/inch^2 Ultrahigh-Density Optical Storage Employing Probe-Collection Tunneling-Electron Luminescence(Optics and Quantum Electronics)
- High-Speed Uni-Traveling-Carrier Photodiodes Monolithically Integrated with InP Heterojunction Bipolar Transistors using Be Ion Implantation
- High Output Power (-400μW) Oscillators at around 550GHz Using Resonant Tunneling Diodes with Graded Emitter and Thin Barriers
- High-Performance Composite-Collector InP/InGaAs Heterojunction Bipolar Transistors
- Thermal Diffusion of Si Atoms in Delta-Doped n-Type InAlAs Grown by Metal-Organic Vapor-Phase Epitaxy
- Low-Turn-on-Voltage Heterojunction Bipolar Transistors with a C-Doped InGaAsSb Base Grown by Metalorganic Chemical Vapor Deposition (Special Issue : Solid State Devices and Materials (2))
- Estimation of Transit Time in Terahertz Oscillating Resonant Tunneling Diodes with Graded Emitter and Thin Barriers
- Components in 0.5-μm-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications (電子デバイス)
- Components in 0.5-μm-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications (マイクロ波)
- DC Variable Harmonic Pass Band Operation of AlGaN/GaN Surface Acoustic Wave Devices
- Barrier Thickness Dependence of Photovoltaic Characteristics of InGaN/GaN Multiple Quantum Well Solar Cells
- Reduction of In Composition in Heavily Zn-Doped InAlGaAs Layers Grown at Low Temperature by Metalorganic Chemical Vapor Deposition
- Inverted InAlAs/InGaAs Avalanche Photodiode with Low--High--Low Electric Field Profile
- Components in 0.5-μm-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications
- A low-power wideband InP-HBT 27-1 PRBS generator
- Fundamental oscillation up to 1.08THz in resonant tunneling diodes with high-indium-composition transit layers for reduction of transit delay
- Components in 0.5-μm-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications
- High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal–Organic Vapor-Phase Epitaxy
- Metal-Organic Vapor-Phase Epitaxy Growth of InP-Based Resonant Tunneling Diodes with a Strained In0.8Ga0.2As Well and AlAs Barriers
- Metal-Organic Vapor-Phase Epitaxy of Pseudomorphic InAlP/InGaAs High Electron Mobility Transistor Wafers
- Mechanism of Superior Suppression Effect on Gate Current Leakage in Ultrathin Al2O3/Si3N4 Bilayer-Based AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors
- Thermal Stability of Electrical Properties in AlGaN/GaN Heterostructures
- Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors
- Extremely High Peak Current Densities of over $1\times 10^{6}$ A/cm2 in InP-Based InGaAs/AlAs Resonant Tunneling Diodes Grown by Metal–Organic Vapor-Phase Epitaxy
- Al/AlN/InP Metal-Insulator-Semiconductor-Diode Characteristics with Amorphous AlN Films Deposited by Electron-Cyclotron-Resonance Sputtering
- Metalorganic Vapor Phase Epitaxy Growth of InAlAsSb on InP
- Temperature Dependence of Surface Acoustic Wave Characteristics of GaN Layers on Sapphire Substrates
- Growth of High Electron Mobility Transistor Structure with InAlP Carrier Supply Layer
- Performance of InP/InGaAs HBTs with a Thin Highly N-Type Doped Layer in the Emitter-Base Heterojunction Vicinity
- Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors (Special Issue : Solid State Devices and Materials)
- Suppression of short-channel effect in pseudomorphic In0.25Al0.75P/In0.75Ga0.25As high electron mobility transistors
- Effect of Epitaxial Layer Crystal Quality on DC and RF Characteristics of AlGaN/GaN Short-Gate High-Electron-Mobility Transistors on Sapphire Substrates
- Intrinsic Transit Delay and Effective Electron Velocity of AlGaN/GaN High Electron Mobility Transistors