Inverted InAlAs/InGaAs Avalanche Photodiode with Low--High--Low Electric Field Profile
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概要
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We propose a new p-down inverted avalanche photodiode (APD) structure suitable for a scaled APD with smaller junctions. The inverted APD structure has an edge-field buffer layer to prevent undesirable edge breakdown and suppress the excess surface leakage current associated with the InGaAs mesa surface. The fabricated back-illuminated InAlAs/InGaAs APDs show excellent multiplication characteristics without edge breakdown. An f_{\text{3dB}} of 27 GHz and a GB product of 220 GHz are obtained for these APDs.
- 2012-02-25
著者
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Shigekawa Naoteru
Ntt Photonic Lab. Kanagawa Jpn
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Muramoto Yoshifumi
Ntt Photonics Laboratories
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Yokoyama Haruki
Ntt Photonics Lab. Kanagawa Jpn
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Kodama Satoshi
Ntt Photonics Laboratories
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Ishibashi Tadao
NTT Photonic Laboratories, NTT Corpration
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Nada Masahiro
NTT Photonics Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
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Ishibashi Tadao
NTT Photonics Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
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Kodama Satoshi
NTT Photonics Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
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