A 24-Gsps 3-Bit Nyquist ADC Using InP HBTs for DSP-Based Electronic Dispersion Compensation(Optical)

スポンサーリンク

概要

• 論文の詳細を見る

• A 3-bit flash analog-to-digital converter (ADC) for electronic dispersion compensation (EDC) was developed using InP HBTs. Nyquist operation was confirmed up to 24 Gsps, which enables oversampling acquisition for 10 Gbit/s non-return-to-zero (NRZ) signals. The ADC can also be operated at up to 37 Gsps for low input frequencies. To reduce aperture jitter and achieve a wide band of over 7 GHz, an analog input signal for all pre-amplifiers and a clock signal for all latched comparators are provided as traveling waves through coplanar transmission lines. EDC was demonstrated by capturing a 10-Gbit/s pseudo-random bit stream (PRBS) with the waveform degraded by polarization-mode dispersion (PMD). By using the captured data, we confirmed that a calculation of a transversal filter mitigates PMD.

• 社団法人電子情報通信学会の論文
• 2005-06-01

著者

• Shibata Tadashi

  Department Of Information And Communication Engineering The University Of Tokyo

• Shibata T

  Univ. Tokyo Tokyo Jpn

• Shibata T

  Department Of Information And Communication Engineering The University Of Tokyo

• Ida Minoru

  Ntt Wireless Systems Laboratories

• Ida M

  Ntt Photonics Laboratories Ntt Corporation

• SANO Kimikazu

  NTT Photonics Laboratories

• Nosaka Hideyuki

  Ntt Photonics Laboratories

• Nosaka Hideyuki

  Ntt Photonics Laboratories Ntt Corporation:(present Address)department Iii Ntt Corporation

• NAKAMURA Makoto

  NTT Photonics Laboratories, NTT Corporation

• IDA Minoru

  NTT Photonics Laboratories, NTT Corporation

• KURISHIMA Kenji

  NTT Photonics Laboratories, NTT Corporation

• SHIBATA Tsugumichi

  NTT Photonics Laboratories, NTT Corporation

• TOKUMITSU Masami

  NTT Photonics Laboratories, NTT Corporation

• MURAGUCHI Masahiro

  NTT Photonics Laboratories, NTT Corporation

• Ida Minoru

  Ntt Photonics Laboratories Ntt Corporation

• Muraguchi Masahiro

  Ntt Photonics Laboratories Ntt Corporation

• Muraguchi Masahiro

  Ntt Photonics Laboratories

• Sano Kimikazu

  Ntt Corp. Kanagawa Jpn

• Shibata T

  Ntt Photonics Laboratories Ntt Corporation:(present Address)ntt Science And Core Technology Group Nt

• Nakamura Makoto

  Ntt Photonics Laboratories Ntt Corporation

• Kurishima Kenji

  Ntt Photonics Laboratories Ntt Corporation

• Tokumitsu Masami

  Ntt Photonics Laboratories

• Shibata Tsugumichi

  Ntt Photonics Laboratories Ntt Corporation

関連論文

• Variable Threshold AlGaAs/InGaAs Heterostructure Field-Effect Transistors with Paired Gates Fabricated Using the Wafer-Bonding Technique
• Variable Threshold AlGaAs/InGaAs Heterostructure Field-Effect Transistors with Paired Gates Fabricated Using the Wafer-Bonding Technique
• Fully-Parallel VLSI Implementation of Vector Quantization Processor Using Neuron-MOS Technology (Special Issue on Integrated Electronics and New System Paradigms)
• A Comparative Examination of Ion Implanted n^+p Junctions Annealed at 1000℃ and 450℃
• Effect of Substrate Boron Concentration on the Integrity of 450℃-Annealed Ion-Implanted Junctions
• Reducing Reverse-Bias Current in 450℃-Annealed n^+p Junction by Hydrogern Radical Sintering
• Metamorphic Resonant Tunneling Diodes and Its Application to Chaos Generator ICs
• A Phase Interpolation Direct Digital Synthesizer with a Symmetrically Structured Delay Generator (Special Issue on Microwave and Millimeter Wave Technology)
• A Fast Frequency Switching Synthesizer with a Digitally Controlled Delay Generator(Special Section on Fundamentals of Multi-dimensional Mobile Information Network)
• A 24-Gsps 3-Bit Nyquist ADC Using InP HBTs for DSP-Based Electronic Dispersion Compensation(Optical)
• A Wide-Bandwidth-Output Direct Digital Synthesizer with Multiple Delay Generators
• A Wide-Bandwidth-Output Direct Digital Synthesizer with Plural Delay Generators
• DC Characteristics of InP HBTs under High-Temperature and Bias Stress
• High-Speed, Low-Power Lightwave Communication ICs Using InP/InGaAs Double-Heterojunction Bipolar Transistors (Special Issue on High-Frequency/speed Devices in the 21st Century)
• High-Performance Composite-Collector InP/InGaAs Heterojunction Bipolar Transistors
• Ultrahigh-Speed InP/InGaAs DHBTs with Very High Current Density(Heterostructure Microelectronics with TWHM2003)
• Monolithic integration of UTC-PDs and InP HBTs using Be ion implantation
• Direct Optical Injection Locking of a 100-GHz-Class Oscillator IC Using a Back-Illuminated InP/InGaAs HPT and Its Applications(MWP Devices)(Special Issue on Recent Progress in Microwave and Millimeter-wave Photonics Technologies)
• Highly Reliable Submicron InP-Based HBTs with over 300-GHz f_t
• High-performance and reliable InP/InGaAs HBTs operating at high current density (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• High-performance and reliable InP/InGaAs HBTs operating at high current density (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Performance and Stability of MOVPE-Grown Carbon-Doped InP/InGaAs HBT's Dehydrogenated by an Anneal after Emitter Mesa Formation
• Performance and Stability of MOVPE-Grown Carbon-Doped InP/InGaAs HBT's De-Hydrogenated by an Anneal after Emitter Mesa Formation
• Heavily Carbon Doped Base InP/InGaAs Heterojunction Bipolar Transistors Grown by Two-Step Metalorganic Chemical Vapor Deposition
• Ultrahigh-Speed InP/InGaAs Double-Heterostructure Bipolar Transistors and Analyses of Their Operation
• Growth and Characterization of High-Speed Carbon-Doped-Base InP/InGaAs Heterojunction Bipolar Transistors by Metalorganic Chemical Vapor Deposition
• Growth, Design and Performance of InP-Based Heterostructure Bipolar Transistors
• Effects of a Compositionally-Graded In_xGa_As Base in Abrupt-Emitter InP/InGaAs Heterojunction Bipolar Transistors
• Lateral Scaling Investigation on DC and RF Performances of InP/InGaAs Heterojunction Bipolar Transistors
• A Compact Memory-Merged Vector-Matching Circuitry for Neuron-MOS Associative Processor (Special Issue on Integrated Electronics and New System Paradigms)
• Characterizing Film Quality and Electromigration Resistance of Giant-Grain Copper Interconnects (Special Issue on Sub-Half Micron Si Device and Process Technologies)
• Design of a K-Band Power Amplifier Using On-Wafer-Tuning Load-Pull Method(Special Issue on Microwave and Millimeter-Wave Module Technology)
• Over-100-Gbit/s Multiplexing Operation of InP DHBT Selector IC Designed with High Collector-Current Density
• Over-10-dBm output uni-traveling-carrier photodiode module integrating a power amplifier for wireless transmissions in the 125-GHz band
• Study of a PMD Tolerance Extension by InP HBT Analog EDC IC without Adaptive Control in 43G DQPSK Transmission
• Study of a PMD tolerance extension by InP HBT analog EDC IC without adaptive control in 43G DQPSK transmission
• Study of a PMD tolerance extension by InP HBT analog EDC IC without adaptive control in 43G DQPSK transmission
• Accurate Evaluation of Silicon Planar Doping in InAlAs for InAlAs/InGaAs Modulation Doped Structure Grown by Metal Organic Chemical Vapor Deposition
• A 1.3-μm Optical Transceiver Diode (TRAD) Module for TCM Transmission Systems in Optical Access Networks (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
• Low Power Neuron-MOS Technology for High-Functionality Logic Gate Synthesis (Special Issue on New Concept Device and Novel Architecture LSIs)
• A Novel Broad-Band MMIC VCO Using an Active Inductor (Srecial Section on Analong Circuit Tectningues in the Digital-oriented Era)
• A Monolithic Microwave-Integrated Circuit Doubler Using a Resonant-Tunneling High-Electron-Mobility Transistor
• An MMIC Resonant-Tunneling HEMT Doubler
• Vertical Magnetoresistive / Inductive Head
• A Novel Adaptive Array Utilizing Frequency Characteristics of Multi-Carrier Signals
• A 1.3-μm Optical Transceiver Diode (TRAD) Module for TCM Transmission Systems in Optical Access Networks (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
• A Fully Monolithic Integrated 43-Gbit/s Clock and Data Recovery Circuit Using InAlAs/InGaAs/InP HEMTs
• Impact of High-Precision Processing on the Functional Enhancement of Neuron-MOS Integrated Circuits (Special Issue on Scientific ULSI Manufacturing Technology)
• Self-Aligned Aluminum-Gate MOSFET's Having Ultra-Shallow Junctions Formed by 450℃ Furnace Annealing (Special Issue on Sub-Half Micron Si Device and Process Technologies)
• Hot-Carrier-Immunity Degradation in Metal Oxide Semiconductor Field Effect Transistors Caused by Ion-Bombardment Processes
• Input Power Dependence of Large-Signal Microwave Characteristics of Resonant-Tunneling High Electron Mobility Transistors
• A 24-GS/s 6-bit R-2R Current-Steering DAC in InP HBT Technology
• Automatic Defect Pattern Detection on LSI Wafers Using Image Processing Techniques
• Electron Velocity Overshoot Effect in Collector Depletion Layers of InP/InGaAs Heterojunction Bipolar Transistors
• Investigation of Transition Frequencies of Two Acoustically Coupled Bubbles Using a Direct Numerical Simulation Technique(Electromagnetism, Optics, Acoustics, Heat Transfer, Classical Mechanics and Fluid Mechanics)
• Layered-Oxide-Isolation (LOXI) Metal-Semiconductor Field Effect Transistor (MESFET) for Low Parasitic Source-Drain Capacitance
• W-band Waveguide Amplifier Module with InP-HEMT MMIC for Millimeter-wave Applications
• A Fractional Phase Interpolator Using Two-Step Integration for Frequency Multiplication and Direct Digital Synthesis
• New Stacked Metal--Insulator--Metal Capacitor with High Capacitance Density for Future InP-Based ICs
• Experimental Results of Diversity Reception for Terrestrial Digital Broadcasting(Regular Section)
• High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal-Organic Vapor-Phase Epitaxy
• A Highly Linearized MMIC Amplifier Using a Combination of a Newly Developed LD-FET and D-FET Simultaneously Fabricated with a Self-Alignment/Selective Ion-Implantation Process(Special Issue on Low-Distortion, High-Power, High-Efficiency Active Device and
• A High-Efficiency Linear Power Amplifier with a Novel Output Power Control Technique(Special Issue on Microwave and Millimeter-Wave Module Technology)
• A Novel Optical Control Technique Using Tunable Inductance Circuits
• InP-based High-speed Transistors and Their IC Applications
• A Novel Multi-Service Simultaneous Reception by Sharing Diversity Branches(Software Defined Radio Technology and Its Applications)
• OFDM Demodulation Method with Variable Effective Symbol Duration(Special Section on Multi-dimensional Mobile Information Networks)
• Delta-Sigma Modulator Using a Resonant-Tunneling Diode Quantizer
• High-Speed Uni-Traveling-Carrier Photodiodes Monolithically Integrated with InP Heterojunction Bipolar Transistors using Be Ion Implantation
• Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs(Millimeter-Wave Devices,Heterostructure Microelectronics with TWHM2005)
• InP HEMT Technology for High-Speed Logic and Communications(Compound Semiconductor and Power Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
• InP HEMT Technology for High-Speed Logic and Communications(Session 2 Compound Semiconductor Devices I,AWAD2006)
• InP HEMT Technology for High-Speed Logic and Communications(Session 2 Compound Semiconductor Devices I,AWAD2006)
• 50-Gbit/s Demultiplexer IC Module Using InAlAs/InGaAs/InP HEMTs
• Novel Cost-Effective Photoreceiver Structure with Monolithically-Integrated Polymeric Waveguide Mirrors and Solder Bumps for Future 100-Gbit/s Class Receiver Modules
• High-Performance Composite-Collector InP/InGaAs Heterojunction Bipolar Transistors
• Low-Turn-on-Voltage Heterojunction Bipolar Transistors with a C-Doped InGaAsSb Base Grown by Metalorganic Chemical Vapor Deposition (Special Issue : Solid State Devices and Materials (2))
• 0.25-μm-Emitter InP Heterojunction Bipolar Transistors with a Thin Ledge Structure
• Components in 0.5-μm-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications (電子デバイス)
• Components in 0.5-μm-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications (マイクロ波)
• High ESD Breakdown-Voltage InP HBT Transimpedance Amplifier IC for Optical Video Distribution Systems
• Reduction of In Composition in Heavily Zn-Doped InAlGaAs Layers Grown at Low Temperature by Metalorganic Chemical Vapor Deposition
• Wide dynamic range transimpedance amplifier IC for 100-G DP-QPSK optical links using 1-µm InP HBTs
• Components in 0.5-μm-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications
• A low-power wideband InP-HBT 27-1 PRBS generator
• Components in 0.5-μm-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications
• Metamorphic Resonant Tunneling Diodes and Its Application to Chaos Generator ICs
• Small and Low-Cost Dual-Rate Optical Triplexer for OLT Transceivers in 10G/1G Co-existing 10G-EPON Systems
• 10Gb/s BOSA Employing Low-Cost TO CAN Package and Impedance Matching Circuits in Transmitter
• Performance of InP/InGaAs HBTs with a Thin Highly N-Type Doped Layer in the Emitter-Base Heterojunction Vicinity
• A Wide-Bandwidth-Output Direct Digital Synthesizer with Multiple Delay Generators
• C-10-7 A-2^7-1PRBS Generator in InP-HBT Technology for High-Speed and Low-Power Applications
• Compensation of Polarization Mode Dispersion with Electrical Nonlinear Transmission Lines
• High ESD Breakdown-Voltage InP HBT Transimpedance Amplifier IC for Optical Video Distribution Systems

もっと見る 閉じる

スポンサーリンク