Characterizing Film Quality and Electromigration Resistance of Giant-Grain Copper Interconnects (Special Issue on Sub-Half Micron Si Device and Process Technologies)

概要

論文の詳細を見る
The performance of copper interconnects formed by the low-kinetic-energy ion bombardment process has been investigated. The copper films formed on SiO_2 by this technology under a sufficient amount of ion energy deposition exhibit perfect orientation conversion from Cu (111) to Cu (100) upon post-metallization thermal annealing. We have discovered such crystal orientation conversion is always accompanied by a giant-grain growth as large as 100 μm. The copper film resistivity decreases due to the decrease in the grain boundary scattering, when the giant-grain growth occurs in the film. The resistivity of giant-grain copper film at a room temperature is 1.76 μΩcm which is almost equal to the bulk resistivity of copper. Furthermore, a new-accelerated electromigration life-test method has been developed to evaluate copper interconnects having large electromigration resistance within a very short period of test time. The essence of the new method is the acceleration by a large-current-stress of more than 10^7A / cm^2 and to utilize the self heating of test interconnect for giving temperature stress. In order to avoid uncontrollable thermal runaway and resultant interconnect melting, we adopted a very efficient cooling system that immediately removes Joule heat and keeps the interconnect temperature constant. As a result, copper interconnects formed by the low-kinetic-energy ion bombardment process exhibit three orders of magnitude longer lifetime at K than Al alloy interconnects.
社団法人電子情報通信学会の論文
1993-04-25

Characterizing Film Quality and Electromigration Resistance of Giant-Grain Copper Interconnects (Special Issue on Sub-Half Micron Si Device and Process Technologies)

スポンサーリンク

概要

著者

関連論文

スポンサーリンク