Time-Dependent Dielectric Breakdown Characterization of 90- and 65-nm-Node Cu/SiOC Interconnects with Via Plugs
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概要
- 論文の詳細を見る
- 2007-04-15
著者
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Takewaki Toshiyuki
Nec Electronics Corporation
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Iguchi Manabu
Nec Electronics Corporation
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Suzuki Mieko
Nec Electronics Corporation
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KAMEYAMA Akiko
NEC Electronics Corporation
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UENO Kazuyoshi
Advanced Device Development Division, NEC Electronics Corporation
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KAMEYAMA Akiko
Advanced Device Development Division, NEC Electronics Corporation
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MATSUMOTO Akira
Advanced Device Development Division, NEC Electronics Corporation
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IGUCHI Manabu
Advanced Device Development Division, NEC Electronics Corporation
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TAKEWAKI Toshiyuki
Advanced Device Development Division, NEC Electronics Corporation
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OSHIDA Daisuke
Advanced Device Development Division, NEC Electronics Corporation
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TOYOSHIMA Hironori
Advanced Device Development Division, NEC Electronics Corporation
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KAWAHARA Naoyoshi
Advanced Device Development Division, NEC Electronics Corporation
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ASADA Susumu
Advanced Device Development Division, NEC Electronics Corporation
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SUZUKI Mieko
Advanced Device Development Division, NEC Electronics Corporation
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ODA Noriaki
Advanced Device Development Division, NEC Electronics Corporation
関連論文
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- Time-Dependent Dielectric Breakdown Characterization of 90- and 65-nm-Node Cu/SiOC Interconnects with Via Plugs