Suppression of Electromigration Early Failure of Cu/Porous Low-$k$ Interconnects Using Dummy Metal

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概要

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• The electromigration (EM) lifetime of Cu/porous low-$k$ interconnects was evaluated by EM experiments in which the effect of back-flow stress was negligible. The EM lifetime of the downstream mode was reduced using a porous low-$k$ film (SiOCH) as an intermetal dielectric (IMD) in comparison with using a SiO2 dielectric. The reduction in EM lifetime was observed only at low cumulative failure probability, considered as “early failure”. The early failure was caused by the formation of a slit void under a via. It was found that the early failure was suppressed by placing a dummy metal near the metal/via contact that inhibited the formation of a slit void. The EM degradation of Cu/porous low-$k$ interconnects is likely to be caused by the mechanical properties of porous low-$k$ film. The dummy metal supports the porous low-$k$ film near the metal/via contact, which leads to improved EM.

• 2009-09-25

著者

• TAKEWAKI Toshiyuki

  Advanced Device Development Division, NEC Electronics Corporation

• UENO Kazuyoshi

  Department of Neurosurgery,Hokkaido University School of Medicine

• Kakuhara Yumi

  Advanced Device Development Division, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Yokogawa Shinji

  Advanced Device Development Division, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Hiroi Masayuki

  Advanced Device Development Division, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Takewaki Toshiyuki

  Advanced Device Development Division, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Ueno Kazuyoshi

  Department of Electronic Engineering, Shibaura Institute of Technology, Koto, Tokyo 135-8548, Japan

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