Kakuhara Yumi | Advanced Device Development Division, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
スポンサーリンク
概要
- Kakuhara Yumiの詳細を見る
- 同名の論文著者
- Advanced Device Development Division, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japanの論文著者
関連著者
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Kakuhara Yumi
Advanced Device Development Division, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Ueno Kazuyoshi
Department of Electronic Engineering, Shibaura Institute of Technology, Koto, Tokyo 135-8548, Japan
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UENO Kazuyoshi
Department of Neurosurgery,Hokkaido University School of Medicine
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Kakuhara Yumi
Advanced Device Development Division, NEC Electronics Corporation, Sagamihara, Kanagawa 229-1198, Japan
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Yokogawa Shinji
Advanced Device Development Division, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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TAKEWAKI Toshiyuki
Advanced Device Development Division, NEC Electronics Corporation
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KAWAHARA Naoyoshi
Advanced Device Development Division, NEC Electronics Corporation
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ODA Noriaki
Advanced Device Development Division, NEC Electronics Corporation
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Oda Noriaki
Advanced Device Development Division, NEC Electronics Corporation, Sagamihara, Kanagawa 229-1198, Japan
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Yumi Kakuhara
Advanced Device Development Division, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Hiroi Masayuki
Advanced Device Development Division, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Takewaki Toshiyuki
Advanced Device Development Division, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Ueno Kazuyoshi
Department of Electronic Engineering, Shibaura Institute of Technology, Tokyo 135-8548, Japan
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Kazuyoshi Ueno
Department of Electronic Engineering, Shibaura Institute of Technology, Koto, Tokyo 135-8548, Japan
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Kawahara Naoyoshi
Advanced Device Development Division, NEC Electronics Corporation, Sagamihara, Kanagawa 229-1198, Japan
著作論文
- Suppression of Electromigration Early Failure of Cu/Porous Low-$k$ Interconnects Using Dummy Metal
- Comparison of Lifetime Improvements in Electromigration between Ti Barrier Metal and Chemical Vapor Deposition Co Capping
- Degradation of Electromigration Lifetime of Cu/Low-$k$ Interconnects by Postannealing
- Electromigration Lifetime Enhancement of CoWP Capped Cu Interconnects by Thermal Treatment