Electromigration Lifetime Enhancement of CoWP Capped Cu Interconnects by Thermal Treatment

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概要

• 論文の詳細を見る

• In order to develop highly reliable Cu interconnects, temperature dependence of the electromigration (EM) lifetime of metal (CoWP) capped Cu interconnects is investigated. It is found that the EM lifetime is enhanced as the test temperature rise from 275 to 380 °C. NH3 plasma treatment before the dielectric cap layer deposition on the CoWP capped Cu interconnects influenced the temperature dependence of EM lifetime, that is, the interconnects without the NH3 plasma treatment have longer EM lifetime than those with the NH3 plasma treatment at the higher test temperatures. In order to investigate the mechanism for this lifetime enhancement, micro-analysis and failure mode analysis were carried out. It is concluded that the Co alloying with Cu and the CoWP coverage repair due to Co diffusion at the high temperature lead to the EM lifetime enhancement.

• 2008-06-25

著者

• KAWAHARA Naoyoshi

  Advanced Device Development Division, NEC Electronics Corporation

• ODA Noriaki

  Advanced Device Development Division, NEC Electronics Corporation

• UENO Kazuyoshi

  Department of Neurosurgery,Hokkaido University School of Medicine

• Oda Noriaki

  Advanced Device Development Division, NEC Electronics Corporation, Sagamihara, Kanagawa 229-1198, Japan

• Kakuhara Yumi

  Advanced Device Development Division, NEC Electronics Corporation, Sagamihara, Kanagawa 229-1198, Japan

• Kakuhara Yumi

  Advanced Device Development Division, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Ueno Kazuyoshi

  Department of Electronic Engineering, Shibaura Institute of Technology, Koto, Tokyo 135-8548, Japan

• Kawahara Naoyoshi

  Advanced Device Development Division, NEC Electronics Corporation, Sagamihara, Kanagawa 229-1198, Japan

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