Statistical Analysis of Lifetime Distribution of Time-Dependent Dielectric Breakdown in Cu/Low-$k$ Interconnects by Incorporation of Overlay Error Model

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概要

• 論文の詳細を見る

• We propose a method for the statistical analysis of a via-to-line time-dependent dielectric breakdown (TDDB) test under misalignment impacts. The $\sqrt{E}$ and overlay error models are incorporated into the lifetime distribution analysis in the framework of the Weibull regression model. The doubly truncated normal distribution effectively describes the space-decrease distribution that is estimated using the overlay error model. Incorporating these physical and statistical characteristics into the lifetime distribution analysis yields more reliable distribution parameters and helps to distinguish outliers as early failures with rejection of misalignment impacts.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2010-05-25

著者

• Yokogawa Shinji

  Advanced Device Development Division, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Tsuchiya Hideaki

  Advanced Device Development Division, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Hideaki Tsuchiya

  Advanced Device Development Division, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

関連論文

• Suppression of Electromigration Early Failure of Cu/Porous Low-$k$ Interconnects Using Dummy Metal
• Comparison of Lifetime Improvements in Electromigration between Ti Barrier Metal and Chemical Vapor Deposition Co Capping
• Statistical Analysis of Lifetime Distribution of Time-Dependent Dielectric Breakdown in Cu/Low-$k$ Interconnects by Incorporation of Overlay Error Model

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