A Robust Embedded Ladder-Oxide/Cu Multilevel Interconnect Technology for 0.13μm Complementary Metal Oxide Semiconductor Generation
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-03-15
著者
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Goto Takayuki
Nec Electronics Corporation
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Oda Noriaki
Nec Electronics Corp. Kawasaki‐shi Jpn
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OHTO Koichi
NEC Electronics
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YAMADA Kenta
NEC Electronics Corporation
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Yamada Kenta
Nec Electronics Corp. Kawasaki‐shi Jpn
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Horiuchi Tadahiko
Nec Electronics Corporation
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Kunishima Hiroyuki
Nec Electronics Corporation
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Takewaki Toshiyuki
Nec Electronics Corporation
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Ikeda Masahiro
Nec Electronics Corporation
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Suzuki Mieko
Nec Electronics Corporation
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ITO Shinya
NEC Electronics Corporation
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SHIBA Kazutoshi
NEC Electronics Corporation
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HIRONAGA Nobuo
NEC Electronics Corporation
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HONMA Ichiro
NEC Electronics Corporation
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NANBA Hiroaki
NEC Electronics Corporation
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YOKOGAWA Shinji
NEC Electronics Corporation
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KAMEYAMA Akiko
NEC Electronics Corporation
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USAMI Tatsuya
NEC Electronics Corporation
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KUBO Akira
NEC Electronics Corporation
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YAMAMOTO Yoshiaki
NEC Electronics Corporation
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WATANABE Susumu
NEC Electronics Corporation
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UENO Kazuyoshi
NEC Electronics Corporation
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Ohto Koichi
Nec Electronics Corporation
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Yamanaga Koh
Integrated Research Institute Tokyo Institute Of Technology
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Sekine Makoto
Nec Electronics Corporation
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Shiba K
Nec Electronics Corporation
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Shiba Kazutoshi
Ulsi Device Development Division Nec Corporation
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Oda Noriaki
Ulsi Device Development Division Nec Corporation
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Honma Ichiro
Nec Electronics Corp. Kanagawa Jpn
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