Surface Control of Bottom Electrode in Ultra-Thin SiN Metal–Insulator–Metal Decoupling Capacitors for High Speed Processors

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概要

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• Highly reliable metal–insulator–metal (MIM) capacitor with ultra-thin SiN dielectrics is developed on the surface-controlled bottom electrode in nanometer-scales. Coverage of the TiN bottom electrode with a Ta thin layer achieves smooth surface. In addition, this electrode structure exhibits excellent etching controllability even for the MIM with the ultra-thin SiN dielectrics. The smooth surface of the Ta/TiN stacked electrode improves the dielectric characteristics such as leakage, breakdown and time-dependent dielectric breakdown (TDDB) reliability in the MIM capacitors, integrated into Cu dual-damascene interconnects (DDIs). As a result, the SiN-MIM with the Ta/TiN bottom electrode achieves high capacitance of 7 fF/μm2 as well as high reliabilities, which are 20% higher breakdown field and 6000 times longer TDDB lifetime than that without Ta-insertion. These values guarantee the high performance operation for more than 10 years under the environment at 85 °C.

• 2007-04-30

著者

• 林 喜宏

  NECシステムデバイス研究所

• 林 喜宏

  日本電気株式会社デバイスプラットフォーム研究所

• 林 喜宏

  日本電気株式会社マイクロエレクトロニクス研究所 超高集積回路研究部

• FURUTAKE Naoya

  System Devices Research Laboratories, NEC

• TODA Takeshi

  NEC Electronics

• SHINMURA Toshiki

  NEC Electronics

• IWAKI Takayuki

  NEC Electronics

• OHTO Koichi

  NEC Electronics

• FURUMIYA Masayuki

  NEC Electronics

• HAYASHI Yoshihiro

  System Devices Research Laboratories, NEC

• HAYASHI Yoshihiro

  Device Platforms Research Labs., NEC.

• Saito Shinobu

  System Devices Research Laboratories Nec

• Matsui Koichiro

  Nec Electronics Kanagawa Jpn

• Kume Ippei

  System Devices Research Laboratories Nec

• Inoue Naoya

  System Devices And Fundamental Research Nec Corporation

• Hayashi Yoshihiro

  Nec Corporation

• Hayashi Yoshihiro

  LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Saito Shinobu

  System Devices Research Laboratories, NEC, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Hayashi Yoshihiro

  System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Shinmura Toshiki

  NEC Electronics, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Kawahara Jun

  System Devices Research Laboratories, NEC, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Kawahara Jun

  System Devices and Fundamental Research, NEC Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Hayashi Yoshihiro

  System Devices Research Laboratories, NEC, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Hayashi Yoshihiro

  System Devices and Fundamental Research, NEC Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Hayashi Yoshihiro

  Microelectronics Research Laboratories, NEC, 1120, Shimokuzawa, Sagamihara, Kanagawa 229, Japan

• Furutake Naoya

  System Devices Research Laboratories, NEC, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

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