Impact of Barrier Metal Sputtering on Physical and Chemical Damages in Low-$k$ SiOCH Films with Various Hydrocarbon Content

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概要

• 論文の詳細を見る

• Impact of barrier metal sputtering on physical and chemical damages in the low-$k$ SiOCH films is investigated. In RF sputtering system, the potential drop across the anode sheath accelerates the ion in the plasma toward the wafer surface, inducing damages in the low-$k$ SiOCH dielectrics. High DC bias on the target reduces the anode sheath voltage to suppress the process-induced damage in the SiOCH films. For conventional rigid and porous SiOCH films with methyl (–CH3) additives, the accelerated ions break the Si–CH3 bond, pushing up the dielectric constants. A new type of SiOCH film such as a molecular-pore-stacking (MPS) SiOCH, which is consisted of hexagonal silica ring with a large amount of hydrocarbon groups surrounding the core silica structure, exhibits high endurance to the sputtering-induced damages. The long side-chains of the hydrocarbon prevent the direct ion bonberdment to the core Si–CH3 bonds by sacrificing the C–C bond in the chains, keeping the low dielectric constant in the MPS SiOCH.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-04-25

著者

• 林 喜宏

  NECシステムデバイス研究所

• 林 喜宏

  日本電気株式会社デバイスプラットフォーム研究所

• 林 喜宏

  日本電気株式会社マイクロエレクトロニクス研究所 超高集積回路研究部

• HAYASHI Yoshihiro

  Device Platforms Research Labs., NEC.

• Furutake Naoya

  Device Platforms Research Labs. Nec.

• Hayashi Yoshihiro

  Nec Corporation

• Inoue Naoya

  Device Platforms Research Laboratories, NEC Corp., 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Hayashi Yoshihiro

  LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Ito Fuminori

  Device Platforms Research Laboratories, NEC Corp., 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Hayashi Yoshihiro

  Device Platforms Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Hayashi Yoshihiro

  System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Yamamoto Hironori

  Device Platforms Research Laboratories, NEC Corp., 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Takeuchi Tsuneo

  Device Platforms Research Laboratories, NEC Corp., 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Hayashi Yoshihiro

  System Devices Research Laboratories, NEC, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Hayashi Yoshihiro

  Device Platforms Research Laboratories, NEC Corp., 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Hayashi Yoshihiro

  System Devices and Fundamental Research, NEC Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Hayashi Yoshihiro

  Microelectronics Research Laboratories, NEC, 1120, Shimokuzawa, Sagamihara, Kanagawa 229, Japan

• Furutake Naoya

  Device Platforms Research Laboratories, NEC Corp., 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

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