Analysis of Processing Damage on a Ferroelectric SrBi2Ta2O9 Capacitor for Ferroelectric Random Access Memory Device Fabrication

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概要

• 論文の詳細を見る

• For Ferroelectric random-access memory (FeRAM) device fabrication, it is important to control the processing ambience, especially the hydrogen in process, due to the reduction of ferroelectric oxides such as SrBi2Ta2O9 (SBT). We investigated processing damage to SBT capacitors during (1) the deposition of a cover film on SBT capacitors, (2) the fabrication of a contact hole by reactive ion etching (RIE), and (3) the photoresist mask removal. The O3-TEOS chemical vapor deposition (CVD) process for the deposition of a cover film causes less damage due to the presence of O3 a strong oxidizer. However, during the fabrication of contact holes in SBT capacitors, the plasma-gas species strongly affect the damage to the SBT capacitors. A less damaging process has been developed as follows: forming the contact hole by RIE with CF4 plasma gas instead of CHF3, and removing the photoresist by exposure to oxygen-radical downflow to eliminate hydrogen regeneration from the photoresist decomposition in the O2 plasma. After the process, the leakage current density and the remanent polarization are kept below $10^{-6}$ A/cm-2 and over 15 $\mu$C/cm2, respectively.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2001-04-15

著者

• 林 喜宏

  日本電気株式会社デバイスプラットフォーム研究所

• 林 喜宏

  日本電気株式会社マイクロエレクトロニクス研究所 超高集積回路研究部

• Matsuki Takeo

  System Lsi Operations Unit Nec Corporation

• HAYASHI Yoshihiro

  System Devices Research Laboratories, NEC

• Kawahara Jun

  System Devices Research Laboratories Nec

• Hayashi Yoshihiro

  System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Matsuki Takeo

  System LSI Operations Unit, NEC Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Kawahara Jun

  System Devices and Fundamental Research, NEC Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Hayashi Yoshihiro

  System Devices Research Laboratories, NEC, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Hayashi Yoshihiro

  System Devices and Fundamental Research, NEC Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

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