Mechanical Property Control of Low-$k$ Dielectrics for Diminishing Chemical Mechanical Polishing (CMP)-Related Defects in Cu-Damascene Interconnects

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概要

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• The dielectric constant dependence of the mechanical strength and the adhesion strength is investigated using porosity-controlled low-$k$ films, and a material parameter is clarified to suppress the chemical mechanical polishing (CMP)-related defects in Cu damascene interconnects. Mechanical strengths such as the modulus and hardness of low-$k$ films decreased as the dielectric constant decreased. Adhesion energy between the low-$k$ films and an upper hard-mask layer (HM) of PECVD-SiO2 strongly depends on the dielectric constant of low-$k$ films, while adhesion energy between the low-$k$ films and a lower etch stop layer (ES) of SiCN shows weak dependence. It was found that the adhesion energy between the upper SiO2 and the low-$k$ film is a critical mechanical parameter for diminishing the CMP-related defects. Introducing a porous low-$k$ film, methylsilsesquiazane ($k=2.64$), with high adhesion to the HM-SiO2, we successfully fabricated single damascene copper interconnects within an acceptable limit of CMP-related defects.

• 2004-04-15

著者

• 林 喜宏

  日本電気株式会社デバイスプラットフォーム研究所

• 林 喜宏

  日本電気株式会社マイクロエレクトロニクス研究所 超高集積回路研究部

• HAYASHI Yoshihiro

  System Devices Research Laboratories, NEC

• HIJIOKA Ken-ichiro

  System Devices Research Laboratories, NEC Corporation

• ITO Fuminori

  System Devices Research Laboratories, NEC Corporation

• TAGAMI Masayoshi

  System Devices Research Laboratories, NEC Corporation

• HARADA Yoshimichi

  System Devices Research Laboratories, NEC Corporation

• TAKEUCHI Tsuneo

  System Devices Research Laboratories, NEC Corporation

• Saito Shinobu

  System Devices Research Laboratories Nec

• Ohtake Hiroto

  System Devices Research Laboratories Nec

• Ito Fuminori

  System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Tagami Masayoshi

  System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Saito Shinobu

  System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Hayashi Yoshihiro

  System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Ohtake Hiroto

  System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Harada Yoshimichi

  System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Takeuchi Tsuneo

  System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Hijioka Ken-ichiro

  System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Hayashi Yoshihiro

  System Devices Research Laboratories, NEC, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Hayashi Yoshihiro

  System Devices and Fundamental Research, NEC Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

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