A Novel Gate Electrode Structure for Reduction of Gate Resistance of Sub-0.1 μm RF/Mixed-Signal Metal Oxide Semiconductor Field-Effect Transistors

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概要

• 論文の詳細を見る

• To reduce noise and enhance gain for scaled-down metal oxide semiconductor field-effect transistors (MOSFETs), a novel gate electrode structure "direct finger contact (DFC)" is proposed. The DFC structure reduces the gate electrode resistance by 40%. NF50 (noise figure when the input impedance is 50 $\Omega$) is reduced by 4% with the gate length $L = 48$ nm, the gate width $W_{\text{finger}} =1$ μm, and the number of finger $N =20$. This structure is suitable for low-noise sub-0.1 μm RF/mixed-signal system on chips (SoCs).

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2009-04-25

著者

• 林 喜宏

  NECシステムデバイス研究所

• 林 喜宏

  日本電気株式会社デバイスプラットフォーム研究所

• 林 喜宏

  日本電気株式会社マイクロエレクトロニクス研究所 超高集積回路研究部

• HAYASHI Yoshihiro

  Device Platforms Research Labs., NEC.

• Hayashi Yoshihiro

  Nec Corporation

• Hayashi Yoshihiro

  LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Hayashi Yoshihiro

  System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Hayashi Yoshihiro

  System Devices Research Laboratories, NEC, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Hayashi Yoshihiro

  System Devices and Fundamental Research, NEC Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Hayashi Yoshihiro

  Microelectronics Research Laboratories, NEC, 1120, Shimokuzawa, Sagamihara, Kanagawa 229, Japan

• Hayashi Yoshihiro

  LSI Fundamental Research Lab., NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Umeda Kyoko

  Advanced Device Development Division, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Nagase Hirokazu

  LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Tanabe Akira

  LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Watanabe Takashi

  Advanced Device Development Division, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

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