Porous Low-$k$ Impacts on Performance of Advanced LSI Devices with GHz Operations
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概要
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The impact of porous low-$k$ films on circuit performance in GHz operation was investigated using high-speed circuits in 65 nm complementary metal oxide semiconductor (CMOS) LSI with 11-layered Cu dual damascene interconnects (DDIs). By introducing new non-porogen-type porous films, such as molecular-pore-stacking (MPS) SiOCH films, local low-$k$/Cu structures (M2–M5) with effective dielectric constants ($K_{\text{eff}}$) of 3.1 and 2.9 were fabricated, and their circuit performances were compared to those with conventional local interconnects with $K_{\text{eff}}=3.4$. The interline capacitance ($C_{\text{int}}$), measured using an LCR meter at ${\sim}100$ kHz, was reduced by 12% from $K_{\text{eff}}=3.4$ to 2.9. NAND-type ring oscillators (ROSCs), which were designed to have ${\sim}1.5$ GHz oscillation, also achieved 12 and 10% reductions in signal delay and power consumption, respectively. A 2 GHz static random access memory (SRAM) with $K_{\text{eff}}=2.9$ provides a 4% reduction in bit-line capacitance (M2), resulting in a 6% decrease in $V_{\text{ddmin}}$, or eventually widening the SRAM operation margin. The porous low-$k$ impact on GHz operation is demonstrated for the first time.
- 2009-04-25
著者
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林 喜宏
NECシステムデバイス研究所
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林 喜宏
日本電気株式会社デバイスプラットフォーム研究所
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林 喜宏
日本電気株式会社マイクロエレクトロニクス研究所 超高集積回路研究部
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Okada Norio
Advanced Technology Center National Astronomical Observatory
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HAYASHI Yoshihiro
Device Platforms Research Labs., NEC.
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Fukai Toshinori
Advanced Device Development Division Nec Electronics Corporation
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Hayashi Yoshihiro
Nec Corporation
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Inoue Naoya
LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Ueki Makoto
LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Ueki Makoto
LSI Fundamental Research Lab., NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Tada Munehiro
Device Platforms Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Kawahara Jun
LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Yamamoto Hironori
LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Ito Fuminori
LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Miyake Shinichi
Advanced Devices Division, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Takeuchi Tsuneo
LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Saito Shinobu
LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Tagami Masayoshi
LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Furutake Naoya
LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Hijioka Kenichiro
LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Ito Takatoshi
Advanced ASIC Division, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Shibue Yasuo
Advanced ASIC Division, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Senou Takefumi
Advanced ASIC Division, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Ikeda Rikikazu
Advanced ASIC Division, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Hayashi Yoshihiro
LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Hayashi Yoshihiro
System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Fukai Toshinori
Advanced Devices Division, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Okada Norio
Advanced Devices Division, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Hayashi Yoshihiro
System Devices Research Laboratories, NEC, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Hayashi Yoshihiro
System Devices and Fundamental Research, NEC Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Hayashi Yoshihiro
Microelectronics Research Laboratories, NEC, 1120, Shimokuzawa, Sagamihara, Kanagawa 229, Japan
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Hayashi Yoshihiro
LSI Fundamental Research Lab., NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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