Microstructure Control of Low-Loss Ni–Zn Ferrite by Low-Temperature Sputtering for On-Chip Magnetic Film

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概要

• 論文の詳細を見る

• Low-loss oxide magnetic film of Ni–Zn ferrite (Ni0.5Zn0.5Fe2O4) is deposited by RF magnetron sputtering at a low temperature (300 °C), applicable for integration in advanced LSIs with Cu/low-$k$ interconnects. To control the film microstructure, or its essential magnetic and electrical properties, (1) selection of a buffer layer as a diffusion barrier under the ferrite film and (2) control of the O2/Ar gas ratio in the sputtering chamber are key factors. A thin TaN buffer layer provides the Ni–Zn ferrite film with a highly preferential (311) orientation, resulting in high saturation magnetization. In addition, the thin TaN buffer has a sufficiently good barrier property to be practical for integration of the magnetic film into Cu/low-$k$ interconnects. Oxygen addition to Ar sputtering gas realizes both high (311) crystallization and high resistivity ($\rho=10$ M$\Omega$ cm), which are essential for low-loss properties. Simulation of the on-chip inductor with the magnetic film suggests that the high-$\rho$ magnetic film is suitable for high-efficiency on-chip inductors with GHz ranges.

• 2009-04-25

著者

• 林 喜宏

  NECシステムデバイス研究所

• 林 喜宏

  日本電気株式会社デバイスプラットフォーム研究所

• 林 喜宏

  日本電気株式会社マイクロエレクトロニクス研究所 超高集積回路研究部

• HAYASHI Yoshihiro

  Device Platforms Research Labs., NEC.

• Hayashi Yoshihiro

  Nec Corporation

• Inoue Naoya

  LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Furutake Naoya

  LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Hayashi Yoshihiro

  LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Hayashi Yoshihiro

  System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Hijioka Ken-ichiro

  LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Hayashi Yoshihiro

  System Devices Research Laboratories, NEC, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Hayashi Yoshihiro

  System Devices and Fundamental Research, NEC Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Hayashi Yoshihiro

  Microelectronics Research Laboratories, NEC, 1120, Shimokuzawa, Sagamihara, Kanagawa 229, Japan

• Hayashi Yoshihiro

  LSI Fundamental Research Lab., NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Kaneko Kishou

  LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

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