Hayashi Yoshihiro | Microelectronics Research Laboratories, NEC, 1120, Shimokuzawa, Sagamihara, Kanagawa 229, Japan

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著作論文

3. 45nm/32nm世代ULSI対応の最先端配線技術(次世代コンピュータを支える超高速・超高密度インタコネクション技術)
ランダムテレグラフノイズの包括的理解に向けた新解析手法の提案とその応用(IEDM特集(先端CMOSデバイス・プロセス技術))
High Performance SiN-MIM Decoupling Capacitors with Surface-smoothed Bottom Electrodes for High-speed MPUs
Impact of Barrier Metal Sputtering on Low-k SiOCH Films with Various Chemical Structures
A Metallurgical Prescription Suppressing Stress-induced Voiding (SIV) in Cu lines
ユビキタス時代に対応したLSIデバイスの構造変革 : RF特性の及ぼす寄生抵抗・容量の影響(配線・実装技術と関連材料技術)
低誘電率絶縁膜材料の進化と最先端ULSI多層配線技術
Improvement of Uniformity and Reliability of Scaled-Down Cu Interconnects with Carbon-Rich Low-$k$ Films
Chip-Level Performance Maximization Using ASIS (Application-Specific Interconnect Structure) Wiring Design Concept for 45nm CMOS Generation(Device,Low-Power, High-Speed LSIs and Related Technologies)
Precise Taper-Angle-Control of Via Holes for Reliable Scaled-Down Low-$k$/Cu Interconnects
Porous Low-$k$ Impacts on Performance of Advanced LSI Devices with GHz Operations
A New Differential-Amplifier-Based Offset-Cancellation Sense Amplifier for Speed-Improvement of High-Density Static Random Access Memories in Scaled-Down Complementary Metal–Oxide–Semiconductor Technology
Surface Control of Bottom Electrode in Ultra-Thin SiN Metal–Insulator–Metal Decoupling Capacitors for High Speed Processors
Extrasmall-Area Three-Dimensional Solenoid-Shaped Inductor Integrated into High-Speed Signal Processing Complementary Metal–Oxide–Semiconductor Ultralarge-Scale Integrated Circuits
A Novel Multilayered Ni–Zn-Ferrite/TaN Film for RF/Mobile Applications
Defectless Monolithic Low-$k$/Cu Interconnects Produced by Chemically Controlled Chemical Mechanical Polishing Process with In situ End-Point-Detection Technique
Microstructure Control of Low-Loss Ni–Zn Ferrite by Low-Temperature Sputtering for On-Chip Magnetic Film
Effects of the Metallurgical Properties of Upper Cu Film on Stress-Induced Voiding (SIV) in Cu Dual-Damascene Interconnects
Impact of Barrier Metal Sputtering on Physical and Chemical Damages in Low-$k$ SiOCH Films with Various Hydrocarbon Content
A Novel Gate Electrode Structure for Reduction of Gate Resistance of Sub-0.1 μm RF/Mixed-Signal Metal Oxide Semiconductor Field-Effect Transistors

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