Inoue Naoya | System Devices And Fundamental Research Nec Corporation

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著作論文

High Performance SiN-MIM Decoupling Capacitors with Surface-smoothed Bottom Electrodes for High-speed MPUs
A Metallurgical Prescription Suppressing Stress-induced Voiding (SIV) in Cu lines
Characterization of Ferroelectric Domain Behavior in MOCVD-PZT Capacitors for CMVP FeRAMs
Surface Control of Bottom Electrode in Ultra-Thin SiN Metal–Insulator–Metal Decoupling Capacitors for High Speed Processors
Effects of the Metallurgical Properties of Upper Cu Film on Stress-Induced Voiding (SIV) in Cu Dual-Damascene Interconnects

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