Abe Mari | System Devices Research Laboratories Nec Corporation
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概要
関連著者
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林 喜宏
NECシステムデバイス研究所
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林 喜宏
日本電気株式会社デバイスプラットフォーム研究所
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林 喜宏
日本電気株式会社マイクロエレクトロニクス研究所 超高集積回路研究部
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FURUTAKE Naoya
System Devices Research Laboratories, NEC
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HAYASHI Yoshihiro
System Devices Research Laboratories, NEC
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HAYASHI Yoshihiro
Device Platforms Research Labs., NEC.
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Abe Mari
System Devices Research Laboratories Nec Corporation
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Saito Shinobu
System Devices Research Laboratories Nec
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Inoue Naoya
System Devices And Fundamental Research Nec Corporation
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Hayashi Yoshihiro
Nec Corporation
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Hayashi Yoshihiro
LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Hayashi Yoshihiro
System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Hayashi Yoshihiro
System Devices Research Laboratories, NEC, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Hayashi Yoshihiro
System Devices and Fundamental Research, NEC Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Hayashi Yoshihiro
Microelectronics Research Laboratories, NEC, 1120, Shimokuzawa, Sagamihara, Kanagawa 229, Japan
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Harada Yoshimichi
Device Platforms Research Labs. Nec.
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INOUE Naoya
System Devices Research Laboratories, NEC
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INOUE Naoya
Device Platforms Research Labs., NEC.
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FURUTAKE Naoya
Device Platforms Research Labs., NEC.
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ABE Mari
System Devices Research Laboratories, NEC Corporation
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SAITO Shinobu
System Devices Research Laboratories, NEC Corporation
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Inoue Naoya
Device Platforms Research Labs. Nec.
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Furutake Naoya
Device Platforms Research Labs. Nec.
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Furutake Naoya
System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
著作論文
- A Metallurgical Prescription Suppressing Stress-induced Voiding (SIV) in Cu lines
- Effects of the Metallurgical Properties of Upper Cu Film on Stress-Induced Voiding (SIV) in Cu Dual-Damascene Interconnects