Furutake Naoya | System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

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概要

• Furutake Naoyaの詳細を見る
• 同名の論文著者
• System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japanの論文著者

関連著者

• 林 喜宏

  NECシステムデバイス研究所

• 林 喜宏

  日本電気株式会社デバイスプラットフォーム研究所

• 林 喜宏

  日本電気株式会社マイクロエレクトロニクス研究所 超高集積回路研究部

• FURUTAKE Naoya

  System Devices Research Laboratories, NEC

• HAYASHI Yoshihiro

  System Devices Research Laboratories, NEC

• HAYASHI Yoshihiro

  Device Platforms Research Labs., NEC.

• Abe Mari

  System Devices Research Laboratories Nec Corporation

• Saito Shinobu

  System Devices Research Laboratories Nec

• Inoue Naoya

  System Devices And Fundamental Research Nec Corporation

• Hayashi Yoshihiro

  Nec Corporation

• Hayashi Yoshihiro

  LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Hayashi Yoshihiro

  System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Hayashi Yoshihiro

  System Devices Research Laboratories, NEC, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Hayashi Yoshihiro

  System Devices and Fundamental Research, NEC Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Hayashi Yoshihiro

  Microelectronics Research Laboratories, NEC, 1120, Shimokuzawa, Sagamihara, Kanagawa 229, Japan

• Furutake Naoya

  System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

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著作論文

• Effects of the Metallurgical Properties of Upper Cu Film on Stress-Induced Voiding (SIV) in Cu Dual-Damascene Interconnects

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