Tatsumi Toru | System Devices And Fundamental Research Nec Corporation

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著作論文

1.2nm HfSiON/SiON stacked gate insulators for 65nm-node MISFETs
High-Mobility Dual Metal Gate MOS Transistors with High-k Gate Dielectrics
High Mobility Dual Metal Gate MOS Transistors with High-k Gate Dielectrics
Fully Silicided NiSi Gates on HfSiON Gate Dielectrics for Low Power Application
Analysis of the Origin of the Threshold Voltage Change Induced by Impurity in Fully Silicided NiSi/SiO_2 gate stacks
Characterization of Ferroelectric Domain Behavior in MOCVD-PZT Capacitors for CMVP FeRAMs
Mechanism of Suppressed Change in Effective Work Functions for Impurity-Doped Fully Silicided NiSi Electrodes on Hf-Based Gate Dielectrics
1.2 nm HfSiON/SiON Stacked Gate Insulators for 65-nm-Node MISFETs
Fully Silicided NiSi Gate Electrodes on HfSiON Gate Dielectrics for Low-Power Applications
Analysis of Origin of Threshold Voltage Change Induced by Impurity in Fully Silicided NiSi/SiO2 Gate Stacks
Metal Organic Atomic Layer Deposition of Metal Silicate Film for High-$k$ Gate Dielectrics
Mechanism for Fermi Level Pinning at Electrode/Hf-Based Dielectric Interface: Systematic Study of Dependence of Effective Work Functions for Polycrystalline Silicon and Fully Silicided NiSi Electrodes on Hf Density at Interface
Origin of Flatband Voltage Shift in Poly-Si/Hf-Based High-k Gate Dielectrics and Flatband Voltage Dependence on Gate Stack Structure

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