Ikarashi Nobuyuki | System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

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概要

• Ikarashi Nobuyukiの詳細を見る
• 同名の論文著者
• System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japanの論文著者

関連著者

• Terai Masayuki

  System Devices Research Laboratories Nec Corp.

• IWAMOTO Toshiyuki

  System Devices Research Laboratories, NEC Corporation

• SAITOH Motofumi

  System Devices Research Laboratories, NEC Corporation

• Morioka Ayuka

  System Devices Research Laboratories Nec Corporation

• Fujieda Shinji

  System Devices Research Laboratories Nec Corp.

• Watanabe Heiji

  System Devices Research Laboratories Nec Corporation

• Tatsumi Toru

  System Devices And Fundamental Research Nec Corporation

• Ogura Takashi

  System Devices And Fundamental Research Nec Corporation

• Ikarashi Nobuyuki

  System Devices Research Laboratories Nec Corporation

• Watanabe Koji

  System Devices Research Laboratories Nec Corp.

• Watanabe Hirohito

  System Devices Research Laboratories Nec Corp.

• Terai Masayuki

  System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Ikarashi Nobuyuki

  System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Watanabe Hirohito

  System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Fujieda Shinji

  System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Saitoh Motofumi

  System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Iwamoto Toshiyuki

  System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

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著作論文

• 1.2 nm HfSiON/SiON Stacked Gate Insulators for 65-nm-Node MISFETs

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