Metal Organic Atomic Layer Deposition of Metal Silicate Film for High-$k$ Gate Dielectrics

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概要

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• We investigated the use of atomic layer deposition to fabricate metal silicate film for high-$k$ gate dielectrics. We used a metal organic precursor and alternate exposures of Ar plasma to achieve ion-assisted mixing of metal atoms into the substrate during each ALD cycle. The concentration of metal atoms was varied by changing the length of the cycles. The electrical characteristics of the silicate film were better than those of film fabricated using O2 plasma or H2O irradiation.

• Japan Society of Applied Physicsの論文
• 2004-10-01

著者

• Tatsumi Toru

  System Devices And Fundamental Research Nec Corporation

• Endo Kazuhiko

  System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Tatsumi Toru

  System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

関連論文

• 1.2nm HfSiON/SiON stacked gate insulators for 65nm-node MISFETs
• High-Mobility Dual Metal Gate MOS Transistors with High-k Gate Dielectrics
• High Mobility Dual Metal Gate MOS Transistors with High-k Gate Dielectrics
• Fully Silicided NiSi Gates on HfSiON Gate Dielectrics for Low Power Application
• Analysis of the Origin of the Threshold Voltage Change Induced by Impurity in Fully Silicided NiSi/SiO_2 gate stacks
• Characterization of Ferroelectric Domain Behavior in MOCVD-PZT Capacitors for CMVP FeRAMs
• Mechanism of Suppressed Change in Effective Work Functions for Impurity-Doped Fully Silicided NiSi Electrodes on Hf-Based Gate Dielectrics
• 1.2 nm HfSiON/SiON Stacked Gate Insulators for 65-nm-Node MISFETs
• Fully Silicided NiSi Gate Electrodes on HfSiON Gate Dielectrics for Low-Power Applications
• Analysis of Origin of Threshold Voltage Change Induced by Impurity in Fully Silicided NiSi/SiO2 Gate Stacks
• Metal Organic Atomic Layer Deposition of Metal Silicate Film for High-$k$ Gate Dielectrics
• Mechanism for Fermi Level Pinning at Electrode/Hf-Based Dielectric Interface: Systematic Study of Dependence of Effective Work Functions for Polycrystalline Silicon and Fully Silicided NiSi Electrodes on Hf Density at Interface
• Origin of Flatband Voltage Shift in Poly-Si/Hf-Based High-k Gate Dielectrics and Flatband Voltage Dependence on Gate Stack Structure

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